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View all- Krstic MGrass EFan X(2017)Asynchronous and GALS Design -Overview and Perspectives2017 New Generation of CAS (NGCAS)10.1109/NGCAS.2017.42(85-88)Online publication date: Sep-2017
FinFET transistor is a promising alternative to CMOS transistor beyond 25nm technology. Independent-Gate FinFET (IGFinFET) are particularly interesting, as they have double gates and offer various options to designers. In the context of this technology, ...
A very important challenge in designing through-silicon via (TSV)-based 3D ICs is to accurately estimate, through all stages of the physical design, the interconnect delay which is strongly dependent on the layout of 3D IC. The earlier in the design ...
Through-silicon vias (TSVs) are required for transmitting signals among different dies for the three-dimensional integrated circuit (3D IC) technology. The significant silicon areas occupied by TSVs bring critical challenges for 3D IC placement. Unlike ...
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