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Conferences > OFC > 2014 > Tu2C > Tu2C.2

Development of Si photonics technology: Ge/Si avalanche photodiode for PON applications

Mengyuan Huang, Pengfei Cai, Liangbo Wang, Tuo Shi, Wang Chen, Su Li, Guanghui Hou, Ching-yin Hong, and Dong Pan

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Abstract

We accomplished the first mass-production of Ge/Si avalanche photodiode (APD) for FTTx applications in a standard CMOS foundry. Our APDs satisfy sensitivity requirements of 10G PON (both OLT and ONU sides) applications within −5°C~75°C.

© 2014 Optical Society of America

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