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Challenges in low-power analog circuit design for sub-28nm CMOS technologies

Published: 11 August 2014 Publication History

Abstract

In this paper, we discuss some of the most pressing challenges in low-power analog circuit design for sub-28nm technologies. A design methodology suitable for deep submicron low-power analog design is first described. Using the proposed figure of merit, several technologies as they scale down towards 28nm are compared. This is followed by a discussion of some of the issues that are unique to 28nm CMOS technologies and beyond. The effect of FinFETs devices in analog circuit design is also explored.

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W. Sansen, "Analog design procedures for channel lengths down to 20nm," 20th Int'l Conf. on Electronics, Circuits and Systems (ICECS), pp. 337--340, 2013.
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T. Cao, et. al., "A 9-bit 50MS/s Asynchronous SAR ADC in 28nm CMOS," NORCHIP, pp. 1--6, 2012.
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    cover image ACM Conferences
    ISLPED '14: Proceedings of the 2014 international symposium on Low power electronics and design
    August 2014
    398 pages
    ISBN:9781450329750
    DOI:10.1145/2627369
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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    Published: 11 August 2014

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    Author Tags

    1. 28nm cmos technology
    2. device mismatch
    3. finfet
    4. leakage current
    5. low power analog circuit design

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    Overall Acceptance Rate 398 of 1,159 submissions, 34%

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