Papers by Hiroshi Inokawa
The Japan Society of Applied Physics, Jan 28, 2020
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Japanese Journal of Applied Physics, May 21, 2019
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IEICE Transactions on Electronics, Nov 1, 2004
This paper presents a model-based study of SET (Single-Electron-Transistor) logic gate family for... more This paper presents a model-based study of SET (Single-Electron-Transistor) logic gate family for synthesizing binary, MV (Multiple-Valued) and mixed-mode logic circuits. The use of SETs combined with MOS transistors allows compact realization of basic logic functions that exhibit periodic transfer characteristics. The operation of basic SET logic gates is successfully confirmed through SPICE circuit simulation based on the physical device model of SETs. The proposed SET logic gates are useful for implementing binary logic circuits, MV logic circuits and binary-MV mixed-mode logic circuits in a highly flexible manner. As an example, this paper describes design of various parallel counters for carry-propagation-free arithmetic, where MV signals are effectively used to achieve higher functionality with lower hardware complexity.
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Physica E-low-dimensional Systems & Nanostructures, Jul 1, 2003
ABSTRACT
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Journal of Materials Research, Jun 1, 1991
A 70-nm-thick, 19-μΩ · cm TiSi2 layer is formed using a Ti-ion implantation technique. TiN/TiSi2 ... more A 70-nm-thick, 19-μΩ · cm TiSi2 layer is formed using a Ti-ion implantation technique. TiN/TiSi2 double layers, whose surface morphology is superior to that obtained with conventional deposition and reaction techniques, can also be simultaneously formed by Ti-ion implantation into monocrystalline Si screened with the Si3N4 film. Discrete pn-junction diodes with a shallow TiSi2 layer and Ti-polycide-gate MOS capacitors are fabricated to determine the influences of Ti-ion implantation on electrical characteristics. The leakage current of the B-doped p+n junction and As/P-doped n+p junction with Ti-ion implanted silicide layer is low enough for device applications. Silicide formation on the gate polycrystalline-Si does not affect the breakdown electric field strength of a 20-nm-thick gate oxide. MOS capacitors showed normal C-V characteristics.
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MRS Proceedings, 1984
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Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1985
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IEEE Transactions on Electron Devices, Nov 1, 2018
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IEEE Transactions on Nanotechnology, Jun 1, 2002
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Composites Part B-engineering, Nov 1, 2019
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IEEE Transactions on Electron Devices, Feb 1, 2003
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日本物理学会講演概要集, Feb 28, 2007
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Lecture notes in electrical engineering, 2021
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In order to make room-temperature terahertz (THz) detectors with high-detectivity, we have studie... more In order to make room-temperature terahertz (THz) detectors with high-detectivity, we have studied room-temperature THz antenna-coupled bolometers with titanium (Ti) meander-line thermistor fabricated on a high-resistivity silicon (Si) substrate by MEMS process. In this paper, we report the spectrum of responsivity which spreads at least in the range of 0.1 THz width around 1 THz. There are high-responsivity bands with the orders of 1000 V/W in the spectrum. Thanks to the meander-line and low noise of metal thermistors, we have achieved good noise-equivalent power (NEP) of the order of 10–11 W/Hz1/2 and response speed of 5 kHz for the room-temperature antenna-coupled bolometers with a Ti thermistor $0.1~\mu \text{m}$-wide and $90\mu \text{m}$-long.
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Degradation and recovery behaviors of n-channel metal-oxide-semiconductor field-effect transistor... more Degradation and recovery behaviors of n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and MOS capacitors are discussed based on the empirical power law. Devices with different gate oxide thicknesses, 10 and 33 nm, are stressed with Fowler-Nordheim (FN) gate current and the changes in subthreshold swing (S), drain current (ID), transconductance (Gm), threshold voltage (Vh), interface trap density (Dit) above midgap, interface trapped charge (Qit) above midgap, and effective oxide charge (Q0) are measured during and after stressing. All parameters except Vth and Q0 show recovery after degradation. After some stressing conditions, Vth and Q0 show further degradation. It is found that the changes in parameters, during and after stressing, excluding those in Vth and Q0 can be characterized by power laws. The behaviors of Vth and Q0 are more complex, and the change in Vth is found to be influenced by changes in both Q0 and Qit
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IEICE Technical Report; IEICE Tech. Rep., Jan 25, 2007
ABSTRACT We fabricated a single-electron device (SED) that has many nanodots. Oscillatory charact... more ABSTRACT We fabricated a single-electron device (SED) that has many nanodots. Oscillatory characteristics and multi-gate capabilities of SEDs were used to eliminate size fluctuation and achieve a high functionality. We fabricated a Si nanodot array device, which has two input gates and a control gate, and tested its basic operation characteristics experimentally. The device operates as a logic gate with selectable functions when the control gate voltage is changed. We demonstrated that the device exhibits five of six important logic functions
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Papers by Hiroshi Inokawa