We show nearly 8 dB of crosstalk reduction using ground planes between active device layers in three-dimensional (3-D) integrated circuits. Our experimental work utilizes two planes of MOS transistors with tungsten or polysilicon ground planes designed to attenuate crosstalk. Theoretical simulations, using an electromagnetic solver, and the experimental results are consistent with analytical results. The key result verified is that a ground plane, whose footprint shadows the device area, is sufficiently large for effective attenuation. The interdevice layer ground plane provides an effective means to achieve crosstalk reduction in 3-D mixed-signal/RF integration because of simple fabrication and high coupling isolation.