Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress
SA Jauss, S Schwaiger, W Daves… - 2015 45th European …, 2015 - ieeexplore.ieee.org
SA Jauss, S Schwaiger, W Daves, S Noll, O Ambacher
2015 45th European Solid State Device Research Conference (ESSDERC), 2015•ieeexplore.ieee.orgIn this paper we investigate the drain stress behavior and charge trapping phenomena of
GaN-based high electron mobility transistors (HEMTs). We fabricated GaN-on-Si MIS-
HEMTs with different dielectric stacks in the gate and gate drain access region and
performed interface characterization and stress measurements for slow traps analysis. Our
results show a high dependency of the on-resistance increase on interfaces in the gate-
drain access region. The dielectric interfaces near the channel play a significant role for long …
GaN-based high electron mobility transistors (HEMTs). We fabricated GaN-on-Si MIS-
HEMTs with different dielectric stacks in the gate and gate drain access region and
performed interface characterization and stress measurements for slow traps analysis. Our
results show a high dependency of the on-resistance increase on interfaces in the gate-
drain access region. The dielectric interfaces near the channel play a significant role for long …
In this paper we investigate the drain stress behavior and charge trapping phenomena of GaN-based high electron mobility transistors (HEMTs). We fabricated GaN-on-Si MIS-HEMTs with different dielectric stacks in the gate and gate drain access region and performed interface characterization and stress measurements for slow traps analysis. Our results show a high dependency of the on-resistance increase on interfaces in the gate-drain access region. The dielectric interfaces near the channel play a significant role for long term high voltage stress and regeneration of the device.
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