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Artigo de periodico
Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform (2024)
Verona, Bruno Marinaro; Simionato, Eligia; Palomino, Gustavo; Aldaya, Ivan; Penchel, Rafael Abrantes; Serrano, Ariana Maria da Conceição Lacorte Caniato ; Rehder, Gustavo Pamplona
Source: IEEE Access. Unidade: EP
Subjects: WIRELESS, MICROELETRÔNICA, TELECOMUNICAÇÕES, MATRIZES
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VERONA, Bruno Marinaro et al. Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform. IEEE Access, v. 12, n. Ja 2024, p. 22132-22143, 2024Tradução . . Disponível em: https://doi.org/10.1109/ACCESS.2024.3357078. Acesso em: 06 jan. 2025.
APA
Verona, B. M., Simionato, E., Palomino, G., Aldaya, I., Penchel, R. A., Serrano, A. M. da C. L. C., & Rehder, G. P. (2024). Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform. IEEE Access, 12( Ja 2024), 22132-22143. doi:10.1109/ACCESS.2024.3357078
NLM
Verona BM, Simionato E, Palomino G, Aldaya I, Penchel RA, Serrano AM da CLC, Rehder GP. Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform [Internet]. IEEE Access. 2024 ; 12( Ja 2024): 22132-22143.[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/ACCESS.2024.3357078
Vancouver
Verona BM, Simionato E, Palomino G, Aldaya I, Penchel RA, Serrano AM da CLC, Rehder GP. Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform [Internet]. IEEE Access. 2024 ; 12( Ja 2024): 22132-22143.[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/ACCESS.2024.3357078
Trabalho de evento
Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs (2023)
Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, MICROELETRÔNICA, MATERIAIS NANOESTRUTURADOS
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ARAÚJO, Gustavo Vinicius de e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302603. Acesso em: 06 jan. 2025.
APA
Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302603
NLM
Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603
Vancouver
Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603
Trabalho de evento
Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET (2023)
Ribeiro, Arllen D.R; Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
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RIBEIRO, Arllen D.R et al. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302575. Acesso em: 06 jan. 2025.
APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302575
NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575
Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575
Trabalho de evento
Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET (2023)
Ramos, Daniel Augusto; Sasaki, Kátia Regina Akemi ; Rangel, Ricardo Cardoso; Duarte, Pedro Henrique; Martino, João Antonio
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
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RAMOS, Daniel Augusto et al. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302644. Acesso em: 06 jan. 2025.
APA
Ramos, D. A., Sasaki, K. R. A., Rangel, R. C., Duarte, P. H., & Martino, J. A. (2023). Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302644
NLM
Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644
Vancouver
Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644
Trabalho de evento
Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors (2023)
Souto, Rayana Carvalho de Barros; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, MICROELETRÔNICA, MATERIAIS NANOESTRUTURADOS
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SOUTO, Rayana Carvalho de Barros e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors. 2023, Anais.. [Piscataway]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302596. Acesso em: 06 jan. 2025.
APA
Souto, R. C. de B., Martino, J. A., & Agopian, P. G. D. (2023). Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors. In SBMicro. [Piscataway]: IEEE. doi:10.1109/SBMicro60499.2023.10302596
NLM
Souto RC de B, Martino JA, Agopian PGD. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors [Internet]. SBMicro. 2023 ;[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302596
Vancouver
Souto RC de B, Martino JA, Agopian PGD. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors [Internet]. SBMicro. 2023 ;[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302596
Trabalho de evento-resumo
Platinum micromachining using femtosecond laser pulses (2022)
Rocha, Luiz Eduardo Raphael da; Mendonça, Cleber Renato ; Paula, Kelly Tasso de
Source: Livro de Resumos. Conference titles: Semana Integrada do Instituto de Física de São Carlos - SIFSC. Unidade: IFSC
Subjects: LASER, PROPRIEDADES DOS MATERIAIS, ÓPTICA NÃO LINEAR, MICROELETRÔNICA, NANOPARTÍCULAS, PLATINA
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ROCHA, Luiz Eduardo Raphael da e MENDONÇA, Cleber Renato e PAULA, Kelly Tasso de. Platinum micromachining using femtosecond laser pulses. 2022, Anais.. São Carlos: Instituto de Física de São Carlos - IFSC, 2022. Disponível em: https://repositorio.usp.br/directbitstream/74515f59-ef86-4839-a86f-7bfe841837ae/3119502.pdf. Acesso em: 06 jan. 2025.
APA
Rocha, L. E. R. da, Mendonça, C. R., & Paula, K. T. de. (2022). Platinum micromachining using femtosecond laser pulses. In Livro de Resumos. São Carlos: Instituto de Física de São Carlos - IFSC. Recuperado de https://repositorio.usp.br/directbitstream/74515f59-ef86-4839-a86f-7bfe841837ae/3119502.pdf
NLM
Rocha LER da, Mendonça CR, Paula KT de. Platinum micromachining using femtosecond laser pulses [Internet]. Livro de Resumos. 2022 ;[citado 2025 jan. 06 ] Available from: https://repositorio.usp.br/directbitstream/74515f59-ef86-4839-a86f-7bfe841837ae/3119502.pdf
Vancouver
Rocha LER da, Mendonça CR, Paula KT de. Platinum micromachining using femtosecond laser pulses [Internet]. Livro de Resumos. 2022 ;[citado 2025 jan. 06 ] Available from: https://repositorio.usp.br/directbitstream/74515f59-ef86-4839-a86f-7bfe841837ae/3119502.pdf
Artigo de periodico
Ultrasensitive diamond microelectrode application in the detection of Ca2+ transport by annexinA5-containing nanostructured liposomes (2022)
Pasquarelli, Alberto; Andrilli, Luiz Henrique da Silva ; Bolean, Maytê ; Ferreira, Claudio Reis; Cruz, Marcos Antônio Eufrasio ; Oliveira, Flávia Amadeu de; Ramos, Ana Paula ; Millán, José Luis; Bottini, Massimo; Ciancaglini, Pietro
Source: Biosensors. Unidade: FFCLRP
Subjects: MICROELETRÔNICA, ELETRODO, DIAMANTE, TRANSPORTE DE CÁLCIO
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PASQUARELLI, Alberto et al. Ultrasensitive diamond microelectrode application in the detection of Ca2+ transport by annexinA5-containing nanostructured liposomes. Biosensors, v. 12, n. 7, p. 1-15, 2022Tradução . . Disponível em: https://doi.org/10.3390/bios12070525. Acesso em: 06 jan. 2025.
APA
Pasquarelli, A., Andrilli, L. H. da S., Bolean, M., Ferreira, C. R., Cruz, M. A. E., Oliveira, F. A. de, et al. (2022). Ultrasensitive diamond microelectrode application in the detection of Ca2+ transport by annexinA5-containing nanostructured liposomes. Biosensors, 12( 7), 1-15. doi:10.3390/bios12070525
NLM
Pasquarelli A, Andrilli LH da S, Bolean M, Ferreira CR, Cruz MAE, Oliveira FA de, Ramos AP, Millán JL, Bottini M, Ciancaglini P. Ultrasensitive diamond microelectrode application in the detection of Ca2+ transport by annexinA5-containing nanostructured liposomes [Internet]. Biosensors. 2022 ; 12( 7): 1-15.[citado 2025 jan. 06 ] Available from: https://doi.org/10.3390/bios12070525
Vancouver
Pasquarelli A, Andrilli LH da S, Bolean M, Ferreira CR, Cruz MAE, Oliveira FA de, Ramos AP, Millán JL, Bottini M, Ciancaglini P. Ultrasensitive diamond microelectrode application in the detection of Ca2+ transport by annexinA5-containing nanostructured liposomes [Internet]. Biosensors. 2022 ; 12( 7): 1-15.[citado 2025 jan. 06 ] Available from: https://doi.org/10.3390/bios12070525
Artigo de periodico
Nanowire-based 3-D transmission-line transformer for millimeter-wave applications (2022)
Frutuoso, Tadeu M; Lé, João Eduardo Gentil; Berthoud, Yoann; Pinheiro, Julio M; Margalef-Rovira, Marc; Ferrari, Philippe; Rehder, Gustavo Pamplona ; Serrano, Ariana Maria da Conceição Lacorte Caniato
Source: IEEE Microwave and Wireless Components Letters. Unidade: EP
Subjects: MICROELETRÔNICA, ONDAS ELETROMAGNÉTICAS, MATERIAIS NANOESTRUTURADOS, TRANSFORMADORES E REATORES
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FRUTUOSO, Tadeu M et al. Nanowire-based 3-D transmission-line transformer for millimeter-wave applications. IEEE Microwave and Wireless Components Letters, v. 32, n. 10, p. 1171-1174, 2022Tradução . . Disponível em: https://doi.org/10.1109/LMWC.2022.3159096. Acesso em: 06 jan. 2025.
APA
Frutuoso, T. M., Lé, J. E. G., Berthoud, Y., Pinheiro, J. M., Margalef-Rovira, M., Ferrari, P., et al. (2022). Nanowire-based 3-D transmission-line transformer for millimeter-wave applications. IEEE Microwave and Wireless Components Letters, 32( 10), 1171-1174. doi:10.1109/LMWC.2022.3159096
NLM
Frutuoso TM, Lé JEG, Berthoud Y, Pinheiro JM, Margalef-Rovira M, Ferrari P, Rehder GP, Serrano AM da CLC. Nanowire-based 3-D transmission-line transformer for millimeter-wave applications [Internet]. IEEE Microwave and Wireless Components Letters. 2022 ; 32( 10): 1171-1174.[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/LMWC.2022.3159096
Vancouver
Frutuoso TM, Lé JEG, Berthoud Y, Pinheiro JM, Margalef-Rovira M, Ferrari P, Rehder GP, Serrano AM da CLC. Nanowire-based 3-D transmission-line transformer for millimeter-wave applications [Internet]. IEEE Microwave and Wireless Components Letters. 2022 ; 32( 10): 1171-1174.[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/LMWC.2022.3159096
Tese (Doutorado)
Design of phase shifters in nanowire membrane technology and VCOs in CMOS technology at millimeter-waves for future full frontend integration (2022)
Gomes, Leonardo Amorese Gallo; Serrano, Ariana Maria da Conceição Lacorte Caniato (Orientador); Ferrari, Philippe (coorient); Rehder, Gustavo Pamplona (coorient)
Unidade: EP
Subjects: MICROELETRÔNICA, OSCILADORES, CIRCUITOS INTEGRADOS, TELECOMUNICAÇÕES
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GOMES, Leonardo Amorese Gallo. Design of phase shifters in nanowire membrane technology and VCOs in CMOS technology at millimeter-waves for future full frontend integration. 2022. Tese (Doutorado) – Universidade de São Paulo, São Paulo, 2022. Disponível em: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-24052023-112905/. Acesso em: 06 jan. 2025.
APA
Gomes, L. A. G. (2022). Design of phase shifters in nanowire membrane technology and VCOs in CMOS technology at millimeter-waves for future full frontend integration (Tese (Doutorado). Universidade de São Paulo, São Paulo. Recuperado de https://www.teses.usp.br/teses/disponiveis/3/3140/tde-24052023-112905/
NLM
Gomes LAG. Design of phase shifters in nanowire membrane technology and VCOs in CMOS technology at millimeter-waves for future full frontend integration [Internet]. 2022 ;[citado 2025 jan. 06 ] Available from: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-24052023-112905/
Vancouver
Gomes LAG. Design of phase shifters in nanowire membrane technology and VCOs in CMOS technology at millimeter-waves for future full frontend integration [Internet]. 2022 ;[citado 2025 jan. 06 ] Available from: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-24052023-112905/
Trabalho de evento
Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's (2022)
Ribeiro, Arllen D.R.; Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: MICROELETRÔNICA, SILÍCIO, INOVAÇÕES TECNOLÓGICAS
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ABNT
RIBEIRO, Arllen D.R. et al. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's. 2022, Anais.. Piscataway: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881005. Acesso em: 06 jan. 2025.
APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2022). Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's. In SBMICRO. Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881005
NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's [Internet]. SBMICRO. 2022 ;[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881005
Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's [Internet]. SBMICRO. 2022 ;[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881005
Trabalho de evento
High-speed imaging of flow boiling in asymmetric dual-V microchannels with tapered manifold (2022)
Moreira, Débora Carneiro ; Santos, Jorge Nicolau dos; Nascimento Junior, Valter Salles do; Kandlikar, Satish G; Ribatski, Gherhardt
Source: Proceedings of ENCIT. Conference titles: Brazilian Congress of Thermal Sciences and Engineering. Unidade: EESC
Subjects: TRANSFERÊNCIA DE CALOR, MICROELETRÔNICA, ESCOAMENTO BIFÁSICO, ENGENHARIA MECÂNICA
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MOREIRA, Débora Carneiro et al. High-speed imaging of flow boiling in asymmetric dual-V microchannels with tapered manifold. 2022, Anais.. Rio de Janeiro, RJ: ABCM, 2022. Disponível em: https://repositorio.usp.br/directbitstream/6b68afc2-e33b-4aa3-a726-23b7fe917054/PROD_26259_SYSNO_3153055%20%281%29.pdf. Acesso em: 06 jan. 2025.
APA
Moreira, D. C., Santos, J. N. dos, Nascimento Junior, V. S. do, Kandlikar, S. G., & Ribatski, G. (2022). High-speed imaging of flow boiling in asymmetric dual-V microchannels with tapered manifold. In Proceedings of ENCIT. Rio de Janeiro, RJ: ABCM. Recuperado de https://repositorio.usp.br/directbitstream/6b68afc2-e33b-4aa3-a726-23b7fe917054/PROD_26259_SYSNO_3153055%20%281%29.pdf
NLM
Moreira DC, Santos JN dos, Nascimento Junior VS do, Kandlikar SG, Ribatski G. High-speed imaging of flow boiling in asymmetric dual-V microchannels with tapered manifold [Internet]. Proceedings of ENCIT. 2022 ;[citado 2025 jan. 06 ] Available from: https://repositorio.usp.br/directbitstream/6b68afc2-e33b-4aa3-a726-23b7fe917054/PROD_26259_SYSNO_3153055%20%281%29.pdf
Vancouver
Moreira DC, Santos JN dos, Nascimento Junior VS do, Kandlikar SG, Ribatski G. High-speed imaging of flow boiling in asymmetric dual-V microchannels with tapered manifold [Internet]. Proceedings of ENCIT. 2022 ;[citado 2025 jan. 06 ] Available from: https://repositorio.usp.br/directbitstream/6b68afc2-e33b-4aa3-a726-23b7fe917054/PROD_26259_SYSNO_3153055%20%281%29.pdf
Tese (Doutorado)
An application specific signal processor for gaseous detector systems in high energy physics experiment. (2021)
Sanches, Bruno Cavalcante de Souza ; Van Noije, Wilhelmus Adrianus Maria (Orientador)
Unidade: EP
Subjects: MICROELETRÔNICA, PROCESSAMENTO DIGITAL DE SINAIS, ALGORITMOS GENÉTICOS, DETECÇÃO DE PARTÍCULAS
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ABNT
SANCHES, Bruno Cavalcante de Souza. An application specific signal processor for gaseous detector systems in high energy physics experiment. 2021. Tese (Doutorado) – Universidade de São Paulo, São Paulo, 2021. Disponível em: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-27012022-155540/. Acesso em: 06 jan. 2025.
APA
Sanches, B. C. de S. (2021). An application specific signal processor for gaseous detector systems in high energy physics experiment. (Tese (Doutorado). Universidade de São Paulo, São Paulo. Recuperado de https://www.teses.usp.br/teses/disponiveis/3/3140/tde-27012022-155540/
NLM
Sanches BC de S. An application specific signal processor for gaseous detector systems in high energy physics experiment. [Internet]. 2021 ;[citado 2025 jan. 06 ] Available from: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-27012022-155540/
Vancouver
Sanches BC de S. An application specific signal processor for gaseous detector systems in high energy physics experiment. [Internet]. 2021 ;[citado 2025 jan. 06 ] Available from: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-27012022-155540/
Trabalho de evento-resumo
High aspect ratio silicon microchannel definition via ICP plasma etching using SF6/Ar as gas mixture (2021)
Alvarez, H. S.; Cioldim, F. H.; Silva, A. R.; Diniz, J. A.
Source: Abstracts. Conference titles: Workshop on Semiconductors and Micro and Nano Technology - SEMINATEC. Unidade: EESC
Subjects: TRANSFERÊNCIA DE CALOR, CIRCUITOS INTEGRADOS, MICROELETRÔNICA, ENGENHARIA MECÂNICA
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ABNT
ALVAREZ, H. S. et al. High aspect ratio silicon microchannel definition via ICP plasma etching using SF6/Ar as gas mixture. 2021, Anais.. São Paulo, SP: SBMicro, 2021. Disponível em: https://repositorio.usp.br/directbitstream/af37cdf0-62e5-4e55-90a1-799f83a30bb5/PROD_26257_SYSNO_3153042.pdf. Acesso em: 06 jan. 2025.
APA
Alvarez, H. S., Cioldim, F. H., Silva, A. R., & Diniz, J. A. (2021). High aspect ratio silicon microchannel definition via ICP plasma etching using SF6/Ar as gas mixture. In Abstracts. São Paulo, SP: SBMicro. Recuperado de https://repositorio.usp.br/directbitstream/af37cdf0-62e5-4e55-90a1-799f83a30bb5/PROD_26257_SYSNO_3153042.pdf
NLM
Alvarez HS, Cioldim FH, Silva AR, Diniz JA. High aspect ratio silicon microchannel definition via ICP plasma etching using SF6/Ar as gas mixture [Internet]. Abstracts. 2021 ;[citado 2025 jan. 06 ] Available from: https://repositorio.usp.br/directbitstream/af37cdf0-62e5-4e55-90a1-799f83a30bb5/PROD_26257_SYSNO_3153042.pdf
Vancouver
Alvarez HS, Cioldim FH, Silva AR, Diniz JA. High aspect ratio silicon microchannel definition via ICP plasma etching using SF6/Ar as gas mixture [Internet]. Abstracts. 2021 ;[citado 2025 jan. 06 ] Available from: https://repositorio.usp.br/directbitstream/af37cdf0-62e5-4e55-90a1-799f83a30bb5/PROD_26257_SYSNO_3153042.pdf
Relatorio tecnico
Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning (2020)
Morelhão, Sergio Luiz ; Avanci, L H; Freitas, R; Quivy, Alain André
Unidade: IF
Subjects: MICROELETRÔNICA, DISPOSITIVOS ELETRÔNICOS, DIFRAÇÃO POR RAIOS X, NANOTECNOLOGIA
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ABNT
MORELHÃO, Sergio Luiz et al. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. . Oxford: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0412254.pdf. Acesso em: 06 jan. 2025. , 2020
APA
Morelhão, S. L., Avanci, L. H., Freitas, R., & Quivy, A. A. (2020). Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. Oxford: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0412254.pdf
NLM
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. 2020 ;[citado 2025 jan. 06 ] Available from: https://arxiv.org/pdf/cond-mat/0412254.pdf
Vancouver
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. 2020 ;[citado 2025 jan. 06 ] Available from: https://arxiv.org/pdf/cond-mat/0412254.pdf
Apresentacao sonora/cenica/entrevista
Os professores Raul Abramo e Paulo Nussenzveig falam sobre "Next Generation Silicon Photonics" [Depoimento] (2020)
Abramo, L. Raul ; Nussenzveig, Paulo
Unidade: IF
Subjects: FÍSICA MODERNA, FOTÔNICA, SILÍCIO, MICROELETRÔNICA, DISPOSITIVOS ÓPTICOS, FÍSICA, DIVULGAÇÃO CIENTÍFICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ABRAMO, L. Raul e NUSSENZVEIG, Paulo. Os professores Raul Abramo e Paulo Nussenzveig falam sobre "Next Generation Silicon Photonics" [Depoimento]. . São Paulo: USP. Disponível em: https://www.youtube.com/watch?v=136pztaZfWY&feature=youtu.be. Acesso em: 06 jan. 2025. , 2020
APA
Abramo, L. R., & Nussenzveig, P. (2020). Os professores Raul Abramo e Paulo Nussenzveig falam sobre "Next Generation Silicon Photonics" [Depoimento]. São Paulo: USP. Recuperado de https://www.youtube.com/watch?v=136pztaZfWY&feature=youtu.be
NLM
Abramo LR, Nussenzveig P. Os professores Raul Abramo e Paulo Nussenzveig falam sobre "Next Generation Silicon Photonics" [Depoimento] [Internet]. 2020 ;[citado 2025 jan. 06 ] Available from: https://www.youtube.com/watch?v=136pztaZfWY&feature=youtu.be
Vancouver
Abramo LR, Nussenzveig P. Os professores Raul Abramo e Paulo Nussenzveig falam sobre "Next Generation Silicon Photonics" [Depoimento] [Internet]. 2020 ;[citado 2025 jan. 06 ] Available from: https://www.youtube.com/watch?v=136pztaZfWY&feature=youtu.be
Artigo de periodico
Contactless pick-and-place of millimetric objects using inverted near-field acoustic levitation (2020)
Andrade, Marco Aurélio Brizzotti ; Ramos, Tiago S.; Adamowski, Júlio Cezar ; Marzo, Asier
Source: Applied Physics Letters. Unidades: IF, EP
Subjects: ACÚSTICA, ACÚSTICA, MICROELETRÔNICA, DINÂMICA DOS FLUÍDOS COMPUTACIONAL, MÉTODOS NUMÉRICOS EM DINÂMICA DE FLUÍDOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ANDRADE, Marco Aurélio Brizzotti et al. Contactless pick-and-place of millimetric objects using inverted near-field acoustic levitation. Applied Physics Letters, v. 116, n. 5, 2020Tradução . . Disponível em: https://doi.org/10.1063/1.5138598. Acesso em: 06 jan. 2025.
APA
Andrade, M. A. B., Ramos, T. S., Adamowski, J. C., & Marzo, A. (2020). Contactless pick-and-place of millimetric objects using inverted near-field acoustic levitation. Applied Physics Letters, 116( 5). doi:10.1063/1.5138598
NLM
Andrade MAB, Ramos TS, Adamowski JC, Marzo A. Contactless pick-and-place of millimetric objects using inverted near-field acoustic levitation [Internet]. Applied Physics Letters. 2020 ; 116( 5):[citado 2025 jan. 06 ] Available from: https://doi.org/10.1063/1.5138598
Vancouver
Andrade MAB, Ramos TS, Adamowski JC, Marzo A. Contactless pick-and-place of millimetric objects using inverted near-field acoustic levitation [Internet]. Applied Physics Letters. 2020 ; 116( 5):[citado 2025 jan. 06 ] Available from: https://doi.org/10.1063/1.5138598
Dissertação (Mestrado)
Bluetooth low energy RF front-end for low-voltage applications in CMOS technology. (2019)
Silva, Roberto Rangel da; Van Noije, Wilhelmus Adrianus Maria (Orientador)
Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Roberto Rangel da. Bluetooth low energy RF front-end for low-voltage applications in CMOS technology. 2019. Dissertação (Mestrado) – Universidade de São Paulo, São Paulo, 2019. Disponível em: https://teses.usp.br/teses/disponiveis/3/3140/tde-09012020-082723/. Acesso em: 06 jan. 2025.
APA
Silva, R. R. da. (2019). Bluetooth low energy RF front-end for low-voltage applications in CMOS technology. (Dissertação (Mestrado). Universidade de São Paulo, São Paulo. Recuperado de https://teses.usp.br/teses/disponiveis/3/3140/tde-09012020-082723/
NLM
Silva RR da. Bluetooth low energy RF front-end for low-voltage applications in CMOS technology. [Internet]. 2019 ;[citado 2025 jan. 06 ] Available from: https://teses.usp.br/teses/disponiveis/3/3140/tde-09012020-082723/
Vancouver
Silva RR da. Bluetooth low energy RF front-end for low-voltage applications in CMOS technology. [Internet]. 2019 ;[citado 2025 jan. 06 ] Available from: https://teses.usp.br/teses/disponiveis/3/3140/tde-09012020-082723/
Parte de monografia/livro
Three-dimensional microstructures for biological applications (2017)
Otuka, Adriano J. G.; Tribuzi, Vinicius; Correa, Daniel S.; Mendonça, Cleber Renato
Source: Multiphoton lithography: techniques, materials and applications. Unidade: IFSC
Subjects: MICROELETRÔNICA, BIOLOGIA, POLIMERIZAÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OTUKA, Adriano J. G. et al. Three-dimensional microstructures for biological applications. Multiphoton lithography: techniques, materials and applications. Tradução . Weinheim: Wiley-VCH Verlag, 2017. p. 386 . Disponível em: https://doi.org/10.1002/9783527682676.ch14. Acesso em: 06 jan. 2025.
APA
Otuka, A. J. G., Tribuzi, V., Correa, D. S., & Mendonça, C. R. (2017). Three-dimensional microstructures for biological applications. In Multiphoton lithography: techniques, materials and applications (p. 386 ). Weinheim: Wiley-VCH Verlag. doi:10.1002/9783527682676.ch14
NLM
Otuka AJG, Tribuzi V, Correa DS, Mendonça CR. Three-dimensional microstructures for biological applications [Internet]. In: Multiphoton lithography: techniques, materials and applications. Weinheim: Wiley-VCH Verlag; 2017. p. 386 .[citado 2025 jan. 06 ] Available from: https://doi.org/10.1002/9783527682676.ch14
Vancouver
Otuka AJG, Tribuzi V, Correa DS, Mendonça CR. Three-dimensional microstructures for biological applications [Internet]. In: Multiphoton lithography: techniques, materials and applications. Weinheim: Wiley-VCH Verlag; 2017. p. 386 .[citado 2025 jan. 06 ] Available from: https://doi.org/10.1002/9783527682676.ch14
Artigo de periodico
The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs (2017)
Bordallo, Caio Cesar Mendes ; Collaert, Nadine ; Claeys, Cor ; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Mols, Yannick; Alian, A; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORDALLO, Caio Cesar Mendes et al. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, v. 64, n. 9, p. 3595-3600, 2017Tradução . . Disponível em: https://doi.org/10.1109/ted.2017.2721110. Acesso em: 06 jan. 2025.
APA
Bordallo, C. C. M., Collaert, N., Claeys, C., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2017). The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, 64( 9), 3595-3600. doi:10.1109/ted.2017.2721110
NLM
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/ted.2017.2721110
Vancouver
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2025 jan. 06 ] Available from: https://doi.org/10.1109/ted.2017.2721110
Trabalho de evento-resumo
Printed organic field-effect transistors: fabrication and application in digital logic inverters (2017)
Stefanelo, Josiani Cristina; Faria, Roberto Mendonça
Source: Program Book. Conference titles: Brazilian MRS Meeting. Unidade: IFSC
Subjects: CIRCUITOS INTEGRADOS, MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
STEFANELO, Josiani Cristina e FARIA, Roberto Mendonça. Printed organic field-effect transistors: fabrication and application in digital logic inverters. 2017, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2017. Disponível em: http://www.eventweb.com.br/xvisbpmat/specific-files/grabFile.php?codigo=BNZZ. Acesso em: 06 jan. 2025.
APA
Stefanelo, J. C., & Faria, R. M. (2017). Printed organic field-effect transistors: fabrication and application in digital logic inverters. In Program Book. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de http://www.eventweb.com.br/xvisbpmat/specific-files/grabFile.php?codigo=BNZZ
NLM
Stefanelo JC, Faria RM. Printed organic field-effect transistors: fabrication and application in digital logic inverters [Internet]. Program Book. 2017 ;[citado 2025 jan. 06 ] Available from: http://www.eventweb.com.br/xvisbpmat/specific-files/grabFile.php?codigo=BNZZ
Vancouver
Stefanelo JC, Faria RM. Printed organic field-effect transistors: fabrication and application in digital logic inverters [Internet]. Program Book. 2017 ;[citado 2025 jan. 06 ] Available from: http://www.eventweb.com.br/xvisbpmat/specific-files/grabFile.php?codigo=BNZZ

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