2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008
Speculative SPICE models (also referred to as evaluation-level or guess models), which are extrac... more Speculative SPICE models (also referred to as evaluation-level or guess models), which are extracted based on projected device electrical characteristics (called `targets¿) rather than actual measurement data, are required to support concurrent IC designs. The self-heating effect in silicon-on-insulator (SOI) technologies presents additional challenges in obtaining quality speculative SOI MOSFET models. A novel `shift-and-ratio¿ technique is developed to generate self-heating
2007 IEEE International Conference on Microelectronic Test Structures, 2007
A new methodology is proposed to extract self-heating free I-V curves, including the substrate cu... more A new methodology is proposed to extract self-heating free I-V curves, including the substrate current, of SOI MOSFETs based on triple-temperature, regular DC measurement. It is verified to be accurate with Hspice simulations and suitable for SPICE model parameter extraction. It is also demonstrated that extraction of self-heating free I-V curves is not only desired for efficient SPICE model generation, but also required to accurately capture the true temperature dependences in the models.
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), 2004
... Jung-Suk Goo, Judy Xilin An, Ciby Thuruthiyil, Tran Ly, Qiang Chen, Martin Radwin, Zhi-Yuan W... more ... Jung-Suk Goo, Judy Xilin An, Ciby Thuruthiyil, Tran Ly, Qiang Chen, Martin Radwin, Zhi-Yuan Wu, Michael S. L. Lee, Luis Zamudio, James Yonemura, Farzin Assad, Mario M. Pelella, and Ali B ... Nick Kepler of Advanced Micro Devices for promoting and supporting this project. ...
2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008
Speculative SPICE models (also referred to as evaluation-level or guess models), which are extrac... more Speculative SPICE models (also referred to as evaluation-level or guess models), which are extracted based on projected device electrical characteristics (called `targets¿) rather than actual measurement data, are required to support concurrent IC designs. The self-heating effect in silicon-on-insulator (SOI) technologies presents additional challenges in obtaining quality speculative SOI MOSFET models. A novel `shift-and-ratio¿ technique is developed to generate self-heating
2007 IEEE International Conference on Microelectronic Test Structures, 2007
A new methodology is proposed to extract self-heating free I-V curves, including the substrate cu... more A new methodology is proposed to extract self-heating free I-V curves, including the substrate current, of SOI MOSFETs based on triple-temperature, regular DC measurement. It is verified to be accurate with Hspice simulations and suitable for SPICE model parameter extraction. It is also demonstrated that extraction of self-heating free I-V curves is not only desired for efficient SPICE model generation, but also required to accurately capture the true temperature dependences in the models.
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), 2004
... Jung-Suk Goo, Judy Xilin An, Ciby Thuruthiyil, Tran Ly, Qiang Chen, Martin Radwin, Zhi-Yuan W... more ... Jung-Suk Goo, Judy Xilin An, Ciby Thuruthiyil, Tran Ly, Qiang Chen, Martin Radwin, Zhi-Yuan Wu, Michael S. L. Lee, Luis Zamudio, James Yonemura, Farzin Assad, Mario M. Pelella, and Ali B ... Nick Kepler of Advanced Micro Devices for promoting and supporting this project. ...
Uploads
Papers