A quasi-analytical model addressed to predict the breakdown voltage in four-layer TVs diodes with... more A quasi-analytical model addressed to predict the breakdown voltage in four-layer TVs diodes with Gaussian epitaxial profile is developed for the first time in this work. The model yields the breakdown voltage value in terms of technological and/or geometrical device parameters, being suitable for cases where the punch-through takes place before the avalanche breakdown. For breakdown voltages in excess of
The goal of this work is to explore different ways for co-integrating a power DMOS device in the ... more The goal of this work is to explore different ways for co-integrating a power DMOS device in the bulk Si-substrate which underlies the SOI buried oxide and thin Si overlayer, providing optimal performance and isolation of both kinds of devices. A first phase has consisted of the design and fabrication of a power DMOS, defining and optimising 3 mixed DMOS/SOI-CMOS process based on existing power VDMOS and FD SOI CMOS technologies. 150V power VDMOS have been fabricated. One of these process clearly gives better results ...
Page 1. 167 HEAT GENERATION ANALYSIS IN SOI LDMOS POWER TRANSISTORS J. Roig, D. Flores, J. Urrest... more Page 1. 167 HEAT GENERATION ANALYSIS IN SOI LDMOS POWER TRANSISTORS J. Roig, D. Flores, J. Urresti, S. Hidalgo and J. Rebollo Centre Nacional de Microelectrònica (CNM-CSIC), Campus UAB, Bellaterra 08193 Barcelona, Catalonia ...
The heat generation process inside thin-film silicon-on-insulator LDMOS structures accounting for... more The heat generation process inside thin-film silicon-on-insulator LDMOS structures accounting for Linear Doping Profile (LDP) or Variation on Lateral Doping (VLD) is analysed in this paper by means of numerical simulation tools and analytical modeling. A uniform heat density, mainly due to the Joule effect, has been demonstrated to be generated in a rectangular shaped heat source, contained in the
ABSTRACT One of the design difficulties found in SJ power RF LDMOS transistors is the P/N pillars... more ABSTRACT One of the design difficulties found in SJ power RF LDMOS transistors is the P/N pillars doping inter- diffusion which increases with the lateral diffusion factor and degrades the device RON-sp. An alternative 3-D RESURF method consists on placing a trench oxide of predetermined thickness together with a grounded polysilicon layer inside the trench along the LDD region to replace the P pillar of the SJ LDMOS. The metal-thick-oxide block acts as a field-plate (FP), enhancing the 3-D RESURF lateral depletion which allows increasing the N-drift doping concentration. In order to study the feasibility of applying the FP concept in RF LDMOS transistors a preliminary analysis has been performed to compare the performance of SJ LDMOS with the proposed FP LDMOS structure in terms of drift region resistance (RLDD), voltage capability (VBR) and transconductance (gm) by means of theoretical analysis and extensive 2-D numerical simulations.
ABSTRACT This paper is addressed to the study of 80V STILDMOS transistors in a Thin-SOI technolog... more ABSTRACT This paper is addressed to the study of 80V STILDMOS transistors in a Thin-SOI technology by means of 2D numerical simulations. Extensive 2D numerical simulation results allow to compare the electrical performance of the proposed novel STI LDMOS structure with that of a conventional LDMOS in terms of breakdown voltage, specific on-resistance, transconductance (gm), and cut-off frequency (fT). Moreover, the impact of the STI length (LSTI) and the N-drift implantation energy on the electrical characteristics are considered in detail. The benefits of applying the STI concept to higher voltage Thin-SOI LDMOS (in the range of 80V) is analysed in this paper.
This work deals with the study of a voltage sensor monolithically integrated with 3.3 kV-50 A IGB... more This work deals with the study of a voltage sensor monolithically integrated with 3.3 kV-50 A IGBT. First, the sensor operation mode is explained, and the study of its behaviour, both stationary and transient regimes, is presented for the first time. In addition, the study of its performance under inductive turn-off conditions has been made. To explore this event, physical
Thyristors to be used in 600 V domestic applications are still very widespread as AC switches or ... more Thyristors to be used in 600 V domestic applications are still very widespread as AC switches or as TRIACs. These devices are typically integrated with very deep diffusions by using solid or liquid doping processes. Thyristors implemented with ion implantation processes exhibit more stable performances and their firing mechanisms are more controllable. In this paper three different thyristor structures are
The investigation of the Total Ionising Dose (TID) impact on the electrical characteristics of La... more The investigation of the Total Ionising Dose (TID) impact on the electrical characteristics of Lateral Diffused MOS transistors (LDMOS) requires the performance of a large number of complex and costly irradiation experiments. The development of a suitable simulation procedure would be of major interest in order to reduce the effort in time and cost. This paper describes a simulation methodology
Due to the increasing interest on laterally diffused MOS (LDMOS) transistors as a part of power e... more Due to the increasing interest on laterally diffused MOS (LDMOS) transistors as a part of power electronics in the high energy physics (HEP) experiments, the effect of total ionising dose (TID) on their electrical performances has been experimentally measured. The analysis of the experimental results requires the aid of physics-based simulations to study the impact of TID effects on the
ABSTRACT This paper will consider the use of IGBTs in solid state circuit breakers (SSCB). An opt... more ABSTRACT This paper will consider the use of IGBTs in solid state circuit breakers (SSCB). An optimisation process which produces a better structure of IGBT for use in this application is also presented. Advanced 2D device physical simulations show that the use of a charge storage structures is effective in maintaining the trade-off between important characteristics for SSCB. The optimised structure provides an IGBT with a better on-state performance, a maintained forward blocking capability, and a satisfactory switching performance.
ABSTRACT An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-co... more ABSTRACT An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV–50 A PT-IGBT is introduced to enhance the robustness of the IGBT against short-circuit events. The operation mode of the anode voltage sensor is described and TCAD simulations are performed to describe the static and dynamic performance together with the interaction between the sensor and the IGBT core cells. The study of the anode voltage performance under inductive turn-off conditions is also included, comparing the behaviour of IGBTs with and without anode voltage sensor.
ABSTRACT This paper presents an optimised power semiconductor architecture based on the CIGBT app... more ABSTRACT This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward voltage blocking capability. Indeed, a high overcurrent turn-off and short-circuit withstand capabilities have to be ensured. Starting from a standard NPT-IGBT design for switching applications, the results show that the proposed device, which is optimised by the application of the individual clustered concept, offers a reduction in conduction losses of 13%, without compromise on voltage blocking capability. An original design solution is implemented to further ensure short-circuit and overload turn-off capabilities at maximum ambient temperature and twice the nominal rated current.
This paper is aimed at the experimental demonstration of a new LIGBT structure with enhanced latc... more This paper is aimed at the experimental demonstration of a new LIGBT structure with enhanced latch-up characteristics for power IC applications. For this purpose, several LIGBTs have been fabricated, which allows the comparison of the electrical characteristics of the proposed structure with those of previously reported LIGBTs. The RESURFed devices show a 360 V breakdown voltage and structures with and
A quasi-analytical model addressed to predict the breakdown voltage in four-layer TVs diodes with... more A quasi-analytical model addressed to predict the breakdown voltage in four-layer TVs diodes with Gaussian epitaxial profile is developed for the first time in this work. The model yields the breakdown voltage value in terms of technological and/or geometrical device parameters, being suitable for cases where the punch-through takes place before the avalanche breakdown. For breakdown voltages in excess of
The goal of this work is to explore different ways for co-integrating a power DMOS device in the ... more The goal of this work is to explore different ways for co-integrating a power DMOS device in the bulk Si-substrate which underlies the SOI buried oxide and thin Si overlayer, providing optimal performance and isolation of both kinds of devices. A first phase has consisted of the design and fabrication of a power DMOS, defining and optimising 3 mixed DMOS/SOI-CMOS process based on existing power VDMOS and FD SOI CMOS technologies. 150V power VDMOS have been fabricated. One of these process clearly gives better results ...
Page 1. 167 HEAT GENERATION ANALYSIS IN SOI LDMOS POWER TRANSISTORS J. Roig, D. Flores, J. Urrest... more Page 1. 167 HEAT GENERATION ANALYSIS IN SOI LDMOS POWER TRANSISTORS J. Roig, D. Flores, J. Urresti, S. Hidalgo and J. Rebollo Centre Nacional de Microelectrònica (CNM-CSIC), Campus UAB, Bellaterra 08193 Barcelona, Catalonia ...
The heat generation process inside thin-film silicon-on-insulator LDMOS structures accounting for... more The heat generation process inside thin-film silicon-on-insulator LDMOS structures accounting for Linear Doping Profile (LDP) or Variation on Lateral Doping (VLD) is analysed in this paper by means of numerical simulation tools and analytical modeling. A uniform heat density, mainly due to the Joule effect, has been demonstrated to be generated in a rectangular shaped heat source, contained in the
ABSTRACT One of the design difficulties found in SJ power RF LDMOS transistors is the P/N pillars... more ABSTRACT One of the design difficulties found in SJ power RF LDMOS transistors is the P/N pillars doping inter- diffusion which increases with the lateral diffusion factor and degrades the device RON-sp. An alternative 3-D RESURF method consists on placing a trench oxide of predetermined thickness together with a grounded polysilicon layer inside the trench along the LDD region to replace the P pillar of the SJ LDMOS. The metal-thick-oxide block acts as a field-plate (FP), enhancing the 3-D RESURF lateral depletion which allows increasing the N-drift doping concentration. In order to study the feasibility of applying the FP concept in RF LDMOS transistors a preliminary analysis has been performed to compare the performance of SJ LDMOS with the proposed FP LDMOS structure in terms of drift region resistance (RLDD), voltage capability (VBR) and transconductance (gm) by means of theoretical analysis and extensive 2-D numerical simulations.
ABSTRACT This paper is addressed to the study of 80V STILDMOS transistors in a Thin-SOI technolog... more ABSTRACT This paper is addressed to the study of 80V STILDMOS transistors in a Thin-SOI technology by means of 2D numerical simulations. Extensive 2D numerical simulation results allow to compare the electrical performance of the proposed novel STI LDMOS structure with that of a conventional LDMOS in terms of breakdown voltage, specific on-resistance, transconductance (gm), and cut-off frequency (fT). Moreover, the impact of the STI length (LSTI) and the N-drift implantation energy on the electrical characteristics are considered in detail. The benefits of applying the STI concept to higher voltage Thin-SOI LDMOS (in the range of 80V) is analysed in this paper.
This work deals with the study of a voltage sensor monolithically integrated with 3.3 kV-50 A IGB... more This work deals with the study of a voltage sensor monolithically integrated with 3.3 kV-50 A IGBT. First, the sensor operation mode is explained, and the study of its behaviour, both stationary and transient regimes, is presented for the first time. In addition, the study of its performance under inductive turn-off conditions has been made. To explore this event, physical
Thyristors to be used in 600 V domestic applications are still very widespread as AC switches or ... more Thyristors to be used in 600 V domestic applications are still very widespread as AC switches or as TRIACs. These devices are typically integrated with very deep diffusions by using solid or liquid doping processes. Thyristors implemented with ion implantation processes exhibit more stable performances and their firing mechanisms are more controllable. In this paper three different thyristor structures are
The investigation of the Total Ionising Dose (TID) impact on the electrical characteristics of La... more The investigation of the Total Ionising Dose (TID) impact on the electrical characteristics of Lateral Diffused MOS transistors (LDMOS) requires the performance of a large number of complex and costly irradiation experiments. The development of a suitable simulation procedure would be of major interest in order to reduce the effort in time and cost. This paper describes a simulation methodology
Due to the increasing interest on laterally diffused MOS (LDMOS) transistors as a part of power e... more Due to the increasing interest on laterally diffused MOS (LDMOS) transistors as a part of power electronics in the high energy physics (HEP) experiments, the effect of total ionising dose (TID) on their electrical performances has been experimentally measured. The analysis of the experimental results requires the aid of physics-based simulations to study the impact of TID effects on the
ABSTRACT This paper will consider the use of IGBTs in solid state circuit breakers (SSCB). An opt... more ABSTRACT This paper will consider the use of IGBTs in solid state circuit breakers (SSCB). An optimisation process which produces a better structure of IGBT for use in this application is also presented. Advanced 2D device physical simulations show that the use of a charge storage structures is effective in maintaining the trade-off between important characteristics for SSCB. The optimised structure provides an IGBT with a better on-state performance, a maintained forward blocking capability, and a satisfactory switching performance.
ABSTRACT An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-co... more ABSTRACT An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV–50 A PT-IGBT is introduced to enhance the robustness of the IGBT against short-circuit events. The operation mode of the anode voltage sensor is described and TCAD simulations are performed to describe the static and dynamic performance together with the interaction between the sensor and the IGBT core cells. The study of the anode voltage performance under inductive turn-off conditions is also included, comparing the behaviour of IGBTs with and without anode voltage sensor.
ABSTRACT This paper presents an optimised power semiconductor architecture based on the CIGBT app... more ABSTRACT This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward voltage blocking capability. Indeed, a high overcurrent turn-off and short-circuit withstand capabilities have to be ensured. Starting from a standard NPT-IGBT design for switching applications, the results show that the proposed device, which is optimised by the application of the individual clustered concept, offers a reduction in conduction losses of 13%, without compromise on voltage blocking capability. An original design solution is implemented to further ensure short-circuit and overload turn-off capabilities at maximum ambient temperature and twice the nominal rated current.
This paper is aimed at the experimental demonstration of a new LIGBT structure with enhanced latc... more This paper is aimed at the experimental demonstration of a new LIGBT structure with enhanced latch-up characteristics for power IC applications. For this purpose, several LIGBTs have been fabricated, which allows the comparison of the electrical characteristics of the proposed structure with those of previously reported LIGBTs. The RESURFed devices show a 360 V breakdown voltage and structures with and
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