The WS2 layers are deposited across 300 mm wafers by either plasma-enhanced atomic layer deposition (PE-ALD) or area-selective chemical vapor deposition (CVD). The growths are performed at BEOL compatible deposition temperatures of 300°C and 450°C, respectively.
WS2 transistors on 300 mm wafers with BEOL compatibility - IEEE Xplore
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Abstract: For the first time, WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools.
Dec 11, 2017 · The number of ALD reaction cycles determines the lateral dimensions of the WS2 crystals. This 2D synthesis approach is compatible with ...
WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools and this novel low-temperature flow is promising.
Incorporating a back-gate on a wafer-scale makes it difficult (or impossible) to control the electrostatics of each transistor's gate independently.
We demonstrate an integrated process flow on full 300mm wafers with monolayer WS2 channel. WS2 is a 2D semiconductor from the transition metal dichalcogenide ...
Dec 6, 2018 · Imec has presented a 300mm-wafer platform for MOSFET devices with 2D materials. 2D materials could provide the path towards extreme device-dimension scaling.
WS2 transistors on 300 mm wafers with BEOL compatibility. 2, Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for ...
Feb 27, 2023 · Additionally, 2D FETs can be integrated in the back-end-of-line (BEOL) ... WS2 transistors on 300 mm wafers with BEOL compatibility. Eur. Solid ...
BEOL compatible WS<inf>2</inf> transistors fully fabricated in a 300 mm pilot line. 2017 Silicon Nanoelectronics Workshop, SNW 2017. 2017 | Conference paper.