Dual isolation architecture compared to standard single STI. NMOS and PMOS are isolated by STI while MOSFETs of same type as well as body taps are isolated by ...
Aug 29, 2024 · Unlimited Bi-directional Back-Bias in FD-SOI Technology With New Dual Isolation Integration ... Integrated Plant Control Technology Replaces ...
Jun 21, 2024 · ... Unlimited Bi-directional Back-Bias in FD-SOI Technology With New Dual Isolation Integration, ST Microelectronics https://t.co/roC5g81JRQ.
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Mar 29, 2018 · A novel dual isolation scheme for stress and back-bias maximum efficiency in FDSOI Technology.
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Publications. Publications (28). Unlimited Bi-directional Back-Bias in FD-SOI Technology With New Dual Isolation Integration. Conference Paper. Jun 2024.
BODY-BIASING: AN EXTREMELY POWERFUL AND FLEXIBLE. CONCEPT IN FD-SOI. Body-biasing, also often referred to as back biasing, controls the threshold voltage (VT).
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Substrate contacts in FDSOI process | Forum for Electronics
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Feb 21, 2021 · In FDSOI devices has 5 or 6 legs always, is means you have contacts for body, wells and general substrate. However, if body, wells and substrate are connected ...
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Feb 21, 2018 · So far, most of the body biasing has been uni-directional. That will change at future nodes, and there are workarounds even today. “At 28nm and ...
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Apr 25, 2016 · FDSOI technology not only restores the ability of body biasing, but also extends the range of body bias by allowing forward back bias (FBB) ...
A new design of modular bi-directional power switch for 28nm Ultra Thin Body and BOX (UTBB) Full Depleted (FD) SOI SOI advanced CMOS technology and beyond ...