Abstract: We successfully reduce the operating energy of a DFB laser for use in datacom applications. Since the optical confinement factor is increased by ...
Since the optical confinement factor is increased by integrating the device on SiO2/Si substrate, the device exhibits 171-fJ/bit energy cost when modulating ...
Abstract. We successfully reduce the operating energy of a DFB laser for use in datacom applications. Since the optical confinement factor is increased by ...
Threshold current and the maximum output power were 1.8 mA and 1.57 mW at RT, respectively. The device was operated with a 25.8-Gbit/s NRZ signal under semi- ...
Oct 22, 2024 · Lasers with ultra-low operating energy are desired for use in chip ... 40-Gbit/s Direct Modulation of Membrane Buried Heterostructure DFB Laser on ...
Mar 4, 2019 · To reduce operating energy, it is important to increase the optical confinement factor because the modulation efficiency is proportional to ...
We developed ultrafast and energy-efficient membrane distributed-reflector lasers on Si-based substrates with integrated optical feedback.
Missing: SiO2/ | Show results with:SiO2/
ABSTRACT. Toward the practical use of on-chip optical interconnection in LSIs, we developed an ultralow-power DR laser made in an InP-based membrane on a ...
Apr 5, 2024 · We achieved continuous wave operation of 5- to 80-µm active-length DBR lasers and the 5-µm-long laser consumed 24 fJ/bit with a 10-Gbps NRZ ...
... ultra-low power ... 10 Gbit/s direct modulation of GaInAsP/InP membrane DFB laser on silicon. ... GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI ...
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