Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions. Abstract: An improved structure of the Deep-Trench Lateral Double ...
Aug 26, 2018 · Simulation results show compared with a conventional device, which has the same drift region concentration and the same size but the ...
Simulation results show compared with a conventional device, which has the same drift region concentration and the same size but the perpendicular sidewalls ...
In this case, the drift regions can act as intrinsic regions to sustain a breakdown voltage (BV) as high as possible and, meanwhile, present an on-resistance as ...
A deep trench super-junction LDMOS with double charge compensation layer (DC DT SJ LDMOS) is proposed in this paper. Due to the capacitance effect of the ...
Abstract: A deep trench super-junction LDMOS with double charge compensation layer (DC DT SJ LDMOS) is proposed in this paper. Due to the capacitance effect ...
Ng; A TCAD Study ... Simulation Study of a Super-Junction Deep-Trench LDMOS With a Trapezoidal Trench, IEEE J. ... Bilateral Super-Junction Drift Regions, 41st ...
The simulation results show that compared with the Con. DT SJ LDMOS, the BV of the DC DT SJ LDMOS has been increased from 549.5 to 705.5 V, and the Ron,sp ...
87 (1): 9-20 (2014 )Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions.J. Cheng, P. Li, W. Chen, B. Yi, and X. Chen. MIPRO ...
In this paper, a new silicon-on-insulator superjunction lateral double-diffused MOSFET (SOI SJLDMOS) with a p-trench layer and stepped buried oxide, is ...
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