In this paper, reliability of Through Silicon via (TSV) interconnects is analyzed for two technologies: high density Cu TSV-last and Cu TSV-middle.
Thermal cycling is assessed on two designs: isolated and dense TSV patterns. Dielectric breakdown tests underline an impact of TSV on the reliability of metal ...
Thermal cycling is revealed to induce only defects on non-mature processes. Electromigration induces voids in adjacent metal level, right at TSV interface.
Thermal cycling is revealed to induce only defects on non-mature processes. Electromigration induces voids in adjacent metal level, right at TSV interface.
A comprehensive study of reliability failure modes in an advanced through-silicon via (TSV) mid process flow is presented in Part I of this paper.
Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric. Microelectronics Reliability, 53(1):17-29, 2013 ...
The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between ...
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In this paper, TSV samples are exposed to thermal shock for different cycles. After thermal shock, microstructure of TSV is analyzed. The intrusion of Cu under ...
Reliability of TSV Interconnects:Electromigration, Thermal Cycling, and Impact on above Metal Level Dielectric. Microelectronics Reliability 2013; 53 (1):17 ...
In summary, it is recommended that 50% of failed device is the minimum requirement to terminate a reliability test on TSV packaging, and the 65% of failed ...