An ESD pulse test showed that the Pt-doped Al 2 O 3 film suppressed the peak current approximately 1/40 compared to the Al 2 O 3 film. The microstructure of the ...
Pt-doped Al2O3 was developed as a dissipative gap-material to reduce the ESD current. Pt chips were sputtered on an Alumina terget to vary the film resistance.
Pt-doped Al2O3 was developed as a dissipative gap-material to reduce the ESD current. Pt chips were sputtered on an alumina target to vary the film resistance.
Yutaka Soda, Masaaki Sekine: Pt-Doped Al2O3 as Dissipative Gap-Material in Tape Heads. IAS 2008: 1-6. [+][–]. Coauthor network. maximize.
Bibliographic details on Pt-Doped Al2O3 as Dissipative Gap-Material in Tape Heads.
Pt-Doped Al2O3 as Dissipative Gap-Material in Tape Heads. Yutaka Soda. ,. Masaaki Sekine. Proceedings of the Industry Applications Society Annual Meeting, 2008 ...
Dissipative Gap Material in Tape Heads ... Hence, Pt-doped Al2O3 was developed as a dissipative gap material to reduce the ESD current. ... The microstructure of ...
Industry Applications Magazine, IEEE | Scholars Portal Journals
journals.scholarsportal.info › browse
Hence, Pt-doped Al2O3 was developed as a dissipative gap material to reduce the ESD current. Pt chips were sputtered on an alumina target ... My Articles.
Pt-Doped Al2O3 as Dissipative Gap-Material in Tape Heads · Y. SodaM. Sekine. Engineering, Materials Science. Annual Meeting of the IEEE Industry Applications ...
The invention relates to a high-frequency-transparent component comprising: a main body (2) and a coating (3) consisting of metal-doped Al2O3 sputtered ...