A comprehensive description of band gap and effective masses of III–V semiconductor bulk and ultra-thin body (UTB) structures under realistic biaxial and ...
This paper is an attempt to answer the question whether realistic strain configurations may improve the performance of. III-V-based MOSFETs by means of an ...
Performance study of strained III–V materials for ultra-thin body transistor applications · M. Rau, T. Markussen, +11 authors. K. Stokbro · Published in European ...
This study shows that the strain softening phenomenon emerges after the peak values of strain-stress relations appear for the sliding-body soils, and that the ...
A comprehensive description of band gap and effective masses of III-V semiconductor bulk and ultra-thin body (UTB) structures under realistic biaxial and ...
This paper is an attempt to answer the question whether realistic strain configurations may improve the performance of. III-V-based MOSFETs by means of an ...
In preparation for the 12-nm technology node, this pa- per investigates the performance of single-/double-gate planar ultrathin-body (UTB) FETs and triple-gate ...
Oct 22, 2024 · In preparation for the 12nm technology node, this paper assesses the performance of the In0.75Ga0.25As of III-V semiconductor compounds and ...
Performance study of strained III–V materials for ultra-thin body transistor applications. M Rau, T Markussen, E Caruso, D Esseni, E Gnani, A Gnudi, ... 2016 ...
In this work, we review progress in III-V transistor technologies. Key approaches for silicon integration are described.
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