An analytical model of the initial fast charge loss mechanism for the logic embedded non-volatile memory (eNVM) is proposed in this paper for the first time.

An analytical model of the initial fast charge loss mechanism for the logic embedded non-volatile memory (eNVM) is proposed in this paper for the first time ...

Modelling of initial fast charge loss mechanism for logic embedded non-volatile memories. https://doi.org/10.1016/j.microrel.2017.06.090.

In this work, we report on a thorough study of charge loss in embedded non volatile memories. We focused on the fast initial threshold voltage (Vth) shift, ...

Modelling of initial fast charge loss mechanism for logic embedded non-volatile memories · Computer Science, Engineering. Microelectronics and reliability · 2017.

Modelling of initial fast charge loss mechanism for logic embedded non-volatile memories ... Microelectron. Reliab. 2017. 2 Citations.

Apr 6, 2018 · The main constraint is the fast initial charge loss due to the charge trapping in the tunnel oxide, ONO layer and at the interfaces ...

TL;DR: An analytical model of the initial fast charge loss mechanism for the logic embedded non-volatile memory (eNVM) is proposed in this paper for the first ...

In addition, NAND flash memories are facing significant scaling challenges due to their dependence upon reductions in lithographic resolution as well as.

The FG node is surrounded by the isolation layers including the gate oxide and functions as a non-volatile charge storage node. The coupling device (M1) is ...