Abstract: We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET) considering different geometries.
Abstract: We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET) considering different geometries.
The asymmetric top and bottom gate biases besides different gate materials induce adverse carriers in the channel. ... The Fin-based architecture of EHBTFET is ...
Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET ; ISSN · 1930-8876 ; ISBN · 9781509029693 ; Year of publication · 2016 ; Volume · 2016-October.
Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET · Engineering, Physics. European Solid-State Device Research Conference · 2016.
Impact of Device Geometry of the Fin Electron-Hole Bilayer Tunnel FET. Type: Proceedings Paper. Home · TEC04-Nanoelectronics. Collaboration. Year: 2016. Writers.
The electron–hole (EH) bilayer tunneling field-effect transistor (TFET) is a new device concept that has the potential for reduced voltage operation [1]–[4]. In ...
Missing: geometry fin
Impact of device geometry of the fin electron-hole bilayer tunnel FET. C Alper, JL Padilla, P Palestri, AM Ionescu. 2016 46th European Solid-State Device ...
Here, an experimental study revealed that the bilayer TFET structure is easily affected by the horizontal BTBT component and degrades the steepness of the on/ ...
Oct 22, 2024 · This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher drive ...