This paper investigates the impact of such high radiation on transistors fabricated in a commercial 28 nm bulk CMOS process with the perspective of using it for ...
Abstract—The Large Hadron Collider (LHC) running at. CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of ...
This paper investigates the impact of such high radiation on transistors fabricated in a commercial 28 nm bulk CMOS process with the perspective of using it for ...
Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC ... GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs.
Static measurements on our 28-nm bulk MOSFETs demonstrate an improved radiation tolerance at the switched-on region, whereas most of the irradiated n-type ...
Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC. Pezzotta, A., Zhang, C., Jazaeri, F., Bruschini, C., Borghello, G., Faccio, F ...
Enz, “Impact of. GigaRad ionizing dose on 28nm bulk MOSFETs for future HL-LHC,” in 2016 Proceedings of the 46th European Solid-State Device Research.
Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC. #1. A. Pezzotta(. Ecole Polytechnique, Lausanne. ) ,. C.M. Zhang(. Ecole Polytechnique ...
The TSMC 28 nm bulk CMOS high-k dielectric technology could represent a valid candidate to implement radiation hard read-out front-end systems.
Enz, ”Impact of GigaRad. Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC,” in 2016 46th European Solid-State Device Research Conference. (ESSDERC), 2016.