Abstract: We have developed a Mach-Zehnder modulator using a 700-μm-long heterogeneously integrated InP/Si metal-oxide-semiconductor capacitor.
We have developed a Mach-Zehnder modulator using a 700- m-long heterogeneously integrated InP/Si metal-oxide-semiconductor capacitor. It exhibits VπL and ...
Abstract: We have developed a Mach-Zehnder modulator using a 700-Pm-long heterogeneously integrated InP/Si metal-oxide-semiconductor capacitor. It exhibits VπL ...
We have developed a Mach-Zehnder modulator using a 700- m-long heterogeneously integrated InP/Si metal-oxide-semiconductor capacitor.
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Nov 28, 2024 · Abstract: We demonstrate high-bandwidth O-band Mach–Zehnder modulators with indium phosphide-on-silicon (InP-on-Si) capacitive phase ...
Heterogeneously integrated InP/Si metal-oxidesemiconductor ...
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Dive into the research topics of 'Heterogeneously integrated InP/Si metal-oxidesemiconductor capacitor mach-zehnder modulator'. Together they form a unique ...
Heterogeneously Integrated InP/Si Metal-oxide-semiconductor Capacitor Mach-Zehnder Modulator. Conference Paper. Jan 2017. Tatsurou Hiraki · Takuma Aihara ...
High-bandwidth O-band Mach-Zehnder modulators with indium phosphide- on-silicon (InP-on-Si) capacitive phase shifters that are compatible with heterogeneous ...
Heterogeneous integration of III–V compound semiconductors and Si is important for constructing large-scale photonic integrated circuits.
A heterogeneously integrated InGaAsP/Si MOS-capacitor Mach-Zehnder (MZ) modulator achieves around four times smaller V„L (0.09 Vcm) than that of the ...