Abstract: The feasibility of 0.5-V memory-rich nanoscale CMOS LSIs was studied. First, repair techniques and nanoscale FD-SOI MOSTs are discussed in terms ...
It is concluded that a 0.5-V memory-rich CMOS LSI is possible while reducing the power to one-tenth that of a conventional 1-V CMos LSI if the above devices ...
The feasibility of 0.5-V memory-rich nanoscale CMOS LSIs was studied. First, repair techniques and nanoscale FD-SOI MOSTs are discussed in terms of ...
Abstract- The feasibility of 0.5-V memory-rich nanoscale CMOS. LSIs was studied. First, repair techniques and nanoscale FD-SOI.
Reviews of and perspectives on low-voltage circuits for nanoscale memory-rich CMOS LSIs are described in this talk, focusing mainly on the leakage and ...
In this talk the Vmin of memory-rich nanoscale CMOS LSIs is investigated in an effort to reduce to below 0.5 V through variability-conscious device and circuit ...
Reviews of and perspectives on low-voltage circuits for nanoscale memory-rich CMOS LSIs are described in this talk, focusing mainly on the leakage and ...
Device-conscious circuit designs for low-voltage nanoscale CMOS ...
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The minimum operating voltage, Vmin, of memory-rich nanoscale CMOS LSIs is investigated to open the door to the below 0.5-V era. A new method using a timing ...
Concerns relating to adaptive circuits and relevant technologies to reduce. Vmin and ΔVps are addressed in this paper. The focus will be on memory-rich. LSIs, ...
Apr 25, 2024 · Device-conscious circuit designs for 0.5-V high-speed memory-rich nanoscale CMOS LSIs. ... SRAM Circuit With Expanded Operating Margin and ...