Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. Abstract: A simple model that links MOSFET ...
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations · D. Antoniadis, I. Åberg, +3 authors. J. Hoyt ...
In the paper ''Continuous MOSFET Performance. Increase with Device Scaling: The Role of Strain and. Channel Material Innovations'' by D. A. Antoniadis et al.
The paper further examines channel material innovations that will be required in order to maintain continued commensurate scaling beyond what can be achieved ...
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... strain, is shown to be responsible for device performance increase. Furthermore the carrier velocity is shown to be correlated with the effective mobility ...
Preface · Silicon CMOS devices beyond scaling · Continuous MOSFET performance increase with device scaling: the role of strain and channel material innovations.
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations ... IBM J. Res. Dev. 2006. TLDR.
Nearly continuous increase in the velocity, first as a direct result of scaling and most recently through the introduction of the process-induced strain, is ...
Oct 17, 2017 · The mechanical strain and performance gain has started to diminish due to aggressive transistor pitch scaling. To continue Moore's law of ...
A roadmapping exercise is presented and it is shown that new channel materials are needed to lever carrier velocity beyond what is achieved with uniaxially ...