May 10, 2021 · This article makes the comparisons on the behaviors of three types of commercial GaN power switching devices.
This article makes comparisons on the UIS behaviors of three types of commercial E-mode GaN switching devices, including the withstanding physics, the ...
This article makes the comparisons on the behaviors of three types of commercial GaN power switching devices, including Schottky gate p-GaN high electron ...
Details of the performance of the cell are given, and it is suggested that this technique may be preferable to supersonic jet cooling for some applications.
The experimental measurements show that the GaN cascode devices have lower avalanche energy rating when compared with the closely rated SiC cascode devices just ...
Missing: Behaviors | Show results with:Behaviors
Investigations on Unclamped-Inductive-Switching Behaviors of p ...
colab.ws › ispsd49238.2022.9813660
The measurement results showed that C-doped HEMTs grown on Si substrates exhibited high-saturation current, stabilized threshold voltage, and minor C.C. at ...
Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices · Sheng LiSiyang Liu +4 authors. Weifeng Sun. Engineering ...
In general the switching behaviour of a power device during the unclamped inductive switching (UIS) test will determine the reliability of the power device as ...
Missing: Behaviors | Show results with:Behaviors
Li, Comparison investigations on unclamped-inductive-switching Behaviour's of GaN switching devices, IEEE Trans. Ind. Electron., № 69, с. 5041 https://doi ...
Missing: Behaviors | Show results with:Behaviors
This article reveals the single-pulse and repetitive-pulse unclamped-inductive-switching (UIS) withstanding device model and energy loss mechanism for p-GaN ...
In response to a legal request submitted to Google, we have removed 1 result(s) from this page. If you wish, you may read more about the request at LumenDatabase.org. |