This paper analyses the dependence of SNM of SRAM memory cell on supply voltage, temperature, transistor sizing in 65nm technology at various process corners ( ...

CS. Analysis of 8T SRAM Cell at Various Process. Corners at 65 nm Process Technology. Shilpi Birla1*, Neeraj Kumar Shukla2, Kapil Rathi3, Rakesh Kumar Singh4 ...

Oct 22, 2024 · This paper analyses the dependence of SNM of SRAM memory cell on supply voltage, temperature, transistor sizing in 65 nm technology at various ...

This paper has analyzed 8T FinFET SRAM using SG and LP-IG mode for leakage power and stability issues and it has been found that leakage power has been reduced ...

Widespread simulation results authenticate the cogency and competency of the proposed 8T SRAM model using Cadence and 45nm predictive technology model (PTM).

Birla S. et al. Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process Technology // Circuits and Systems. 2011. Vol. 02. No. 04. pp. 326-329.

Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process Technology. Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process ...

Corner analysis thus simulates different running speed of circuits assuming that transistors have been fabricated at corner process conditions (Birla et al.

Abstract - The Aim of the Thesis is to obtain low power, low leakage 7T SRAM single ended input and output cell with speed up to good level and minimum area ...