Feb 7, 2013 · With this comb-shaped gate configuration, increased tunneling area can be obtained and hence higher on-state current without area penalty.
In this paper, a new tunneling field effect transistor with comb-shaped gate (CG-TFET) is proposed and experimentally demonstrated.
A new tunneling field effect transistor with comb-shaped gate (CG-TFET) is proposed and experimentally demonstrated, which can effectively suppress the ...
In this paper, a comb-gate tunneling field effect transistor (CG-TFET) is proposed to improve the tunneling current by increasing total tunneling junction width ...
In this paper, a comb-gate tunneling field effect transistor (CG-TFET) is proposed to improve the tunneling current by increasing total tunneling junction width ...
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A comb-gate silicon tunneling field effect transistor with improved on-state current · Engineering, Physics. Science China Information Sciences · 2013.
Oct 22, 2024 · ... Gate-All-Around Tunnel Field-Effect Transistors ... A comb-gate silicon tunneling field effect transistor with improved on-state current.
Feb 1, 2019 · It is shown that the All-Si TFET has an extremely low off-state current (<0.5 fA/μm), but its on-state current is less than 0.5 pA/μm at VGS of ...
Sep 30, 2013 · Quantum tunneling is a limitation in today's transistors, but it could be the key to future devices.
Jul 28, 2023 · This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line ...
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