Low-V t small-offset gated preamplifier for sub-1V gigabit DRAM arrays
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A sensing scheme with temporary activation of a low-V t gated preamplifier (LGA) achieves fast sensing, fast local I/O driving and low-leakage operation ...
The GSA thus simultaneously achieves fast sensing, low-leakage data holding, and fast I/O driving, even for sub-1-V mid-point sensing. The GSA is promising for ...
Missing: Vt | Show results with:Vt
Oct 22, 2024 · The GSA thus simultaneously achieves fast sensing, low-leakage data holding, and fast I/O driving, even for sub-1-V mid-point sensing. The GSA ...
Feb 10, 2009 · The LGA quickly amplifies an initial cell signal (vS0) because of its low Vt, despite the mid-point sensing, by turning on a high-Vt sense gate ...
A sensing scheme with temporary activation of a low-Vt gated preamplifier (LGA) achieves fast sensing, fast local I/O driving and low-leakage operation ...
Satoru Akiyama, Riichiro Takemura, Tomonori Sekiguchi, Akira Kotabe, Kiyoo Itoh: A Low-Vt Small-Offset Gated-Preamplifier for Sub-1-V DRAM Mid-Point Sensing ...
This preamplifier consists of a low-VT NMOS cross couple, a low-VT PMOS cross couple and a high-VT CMOS latch. The sensing speed of the proposed preamplifier at ...
Satoru Akiyama, Riichiro Takemura, Tomonori Sekiguchi, Akira Kotabe, Kiyoo Itoh: A Low-Vt Small-Offset Gated-Preamplifier for Sub-1-V DRAM Mid-Point Sensing ...
A novel CMOS low-VT preamplifier suitable for low-voltage and high-speed mid-point sensing was developed for gigabit DRAM and writing time is 72% shorter.
A Low-<i>V</i><sub>t</sub> Small-Offset Gated-Preamplifier for Sub-1-V DRAM Mid-Point Sensing. Satoru Akiyama. ,. Riichiro Takemura. ,. Tomonori Sekiguchi.