This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC) ...
This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count ...
This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC) ...
Feb 22, 2012 · A toggle mode 400Mb/s I/O interface reduces system over- head and enhances overall performance. As shown in the die micrograph in Fig. 25.8.1, ...
This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC) ...
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References: [1] Y. Li, et al., “128Gb 3b/Cell NAND Flash Memory in 19nm Technology with. 18MB/s Write Rate and 400Mb/s Toggle ...
Apr 16, 2012 · Air Gap technology and a Toggle Mode 400Mbps I/O interface, along with improvements in sensing accuracy, enable this 3-bit per cell (X3) ...
Missing: 400Mb/ | Show results with:400Mb/
128Gb 3b/Cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode ... 128Gb 3b/Cell NAND flash memory in 19nm technology with ...
128Gb 3b/Cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. Y Li, S Lee, K Oowada, H Nguyen, Q Nguyen, N Mokhlesi, C ...
128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. ... Note that this feature is a work in progress and that it is ...