Theoretical analysis of continuous-wave Raman gain/lasing in silicon wire waveguides without carrier extraction scheme

Tak-Keung Liang; Luis-Romeu Nunes; Hon-Ki Tsang; Masahiro Tsuchiya

doi:10.1587/elex.2.440

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Theoretical analysis of continuous-wave Raman gain/lasing in silicon wire waveguides without carrier extraction scheme

Tak-Keung Liang, Luis-Romeu Nunes, Hon-Ki Tsang, Masahiro Tsuchiya

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Keywords: silicon photonics, silicon laser, wire waveguides, stimulated Raman scattering

JOURNAL FREE ACCESS

2005 Volume 2 Issue 16 Pages 440-445

DOI https://doi.org/10.1587/elex.2.440

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Abstract

Stimulated Raman scattering in silicon waveguides are attractive for optical amplification/lasing due to high Raman coefficient and high optical pump intensity in the small waveguide core. In this paper, we investigate the effect of two-photon absorption and free-carrier absorption for continuous-wave light propagation in submicron size silicon wire waveguides. We also show that if the waveguide lengths and pump powers are optimized, the net continuous-wave Raman gain and thus lasing activities in such waveguides without any additional free carrier extraction schemes is possible.

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