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Technology/Memory Co-Design and Co-Optimization Using E-Tree Interconnect

Published: 05 June 2023 Publication History

Abstract

For on-chip SRAM, a major portion of delay and energy is contributed by the H-Tree interconnects. In this paper, we propose an E-Tree interconnect technology to minimize the H-Tree delay and energy overheads based on an efficient interconnect technology/memory co-design framework for nonuniform workloads. Various array- and interconnect-level design parameters are co-designed for optimal performance using three emerging interconnect materials with a realistic cell library.

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      cover image ACM Conferences
      GLSVLSI '23: Proceedings of the Great Lakes Symposium on VLSI 2023
      June 2023
      731 pages
      ISBN:9798400701252
      DOI:10.1145/3583781
      Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than the author(s) must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected].

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      Published: 05 June 2023

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      Author Tags

      1. center-pin access
      2. e-tree
      3. emerging interconnect material.
      4. interconnect
      5. sram
      6. technology/memory co-optimization
      7. workload

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      GLSVLSI '23: Great Lakes Symposium on VLSI 2023
      June 5 - 7, 2023
      TN, Knoxville, USA

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      Overall Acceptance Rate 312 of 1,156 submissions, 27%

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