research-article

Writing without Disturb on Phase Change Memories by Integrating Coding and Layout Design

Authors:

Alfredo Velasco,

Georgios Mappouras,

Robert Calderbank,

Daniel J. SorinAuthors Info & Claims

MEMSYS '15: Proceedings of the 2015 International Symposium on Memory Systems

Pages 71 - 77

https://doi.org/10.1145/2818950.2818962

Published: 05 October 2015 Publication History

Abstract

We integrate coding techniques and layout design to eliminate write-disturb in phase change memories (PCMs), while enhancing lifetime and host-visible capacity. We first propose a checkerboard configuration for cell layout to eliminate write-disturb while doubling the memory lifetime. We then introduce two methods to jointly design Write-Once-Memory (WOM) codes and layout. The first WOM-layout design improves the lifetime by more than double without compromising the host-visible capacity. The second design applies WOM codes to even more dense layouts to achieve both lifetime and capacity gains. The constructions demonstrate that substantial improvements to lifetime and host-visible capacity are possible by co-designing coding and cell layout in PCM.

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Cited By

Singh DYeung D(2024)MORSE: Memory Overwrite Time Guided Soft Writes to Improve ReRAM Energy and EnduranceProceedings of the 2024 International Conference on Parallel Architectures and Compilation Techniques10.1145/3656019.3676890(26-39)Online publication date: 14-Oct-2024
https://dl.acm.org/doi/10.1145/3656019.3676890
Wu RShen ZYang ZShu J(2024)Mitigating Write Disturbance in Non-Volatile Memory via Coupling Machine Learning with Out-of-Place Updates2024 IEEE International Symposium on High-Performance Computer Architecture (HPCA)10.1109/HPCA57654.2024.00092(1184-1198)Online publication date: 2-Mar-2024
https://doi.org/10.1109/HPCA57654.2024.00092
Imran MKwon TTouba NYang J(2022)CEnT: An Efficient Architecture to Eliminate Intra-Array Write Disturbance in PCMIEEE Transactions on Computers10.1109/TC.2021.306857771:5(992-1007)Online publication date: 1-May-2022
https://doi.org/10.1109/TC.2021.3068577
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Writing without Disturb on Phase Change Memories by Integrating Coding and Layout Design

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cover image ACM Other conferences

MEMSYS '15: Proceedings of the 2015 International Symposium on Memory Systems

October 2015

278 pages

ISBN:9781450336048

DOI:10.1145/2818950

Copyright © 2015 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Published: 05 October 2015

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MEMSYS '15

MEMSYS '15: International Symposium on Memory Systems

October 5 - 8, 2015

DC, Washington DC, USA

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Cited By

Singh DYeung D(2024)MORSE: Memory Overwrite Time Guided Soft Writes to Improve ReRAM Energy and EnduranceProceedings of the 2024 International Conference on Parallel Architectures and Compilation Techniques10.1145/3656019.3676890(26-39)Online publication date: 14-Oct-2024
https://dl.acm.org/doi/10.1145/3656019.3676890
Wu RShen ZYang ZShu J(2024)Mitigating Write Disturbance in Non-Volatile Memory via Coupling Machine Learning with Out-of-Place Updates2024 IEEE International Symposium on High-Performance Computer Architecture (HPCA)10.1109/HPCA57654.2024.00092(1184-1198)Online publication date: 2-Mar-2024
https://doi.org/10.1109/HPCA57654.2024.00092
Imran MKwon TTouba NYang J(2022)CEnT: An Efficient Architecture to Eliminate Intra-Array Write Disturbance in PCMIEEE Transactions on Computers10.1109/TC.2021.306857771:5(992-1007)Online publication date: 1-May-2022
https://doi.org/10.1109/TC.2021.3068577
Choi JJang JKim L(2019)DC-PCM: Mitigating PCM Write Disturbance with Low Performance Overhead by Using Detection CellsIEEE Transactions on Computers10.1109/TC.2019.293097268:12(1741-1754)Online publication date: 1-Dec-2019
https://doi.org/10.1109/TC.2019.2930972
Hsieh YChen YTang YHuang P(2019)A Selective Write Strategy for the Elimination of Write Disturb Errors on Nonvolatile Memory Caches2019 8th International Conference on Innovation, Communication and Engineering (ICICE)10.1109/ICICE49024.2019.9117270(10-13)Online publication date: Oct-2019
https://doi.org/10.1109/ICICE49024.2019.9117270
Tavana MZiabari AKaeli D(2018)Block CooperationACM Transactions on Architecture and Code Optimization10.1145/324390615:3(1-26)Online publication date: 28-Aug-2018
https://dl.acm.org/doi/10.1145/3243906
Mappouras GVahid ACalderbank RSorin D(2018)Extending Flash Lifetime in Embedded Processors by Expanding Analog ChoiceIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2018.285705937:11(2462-2473)Online publication date: Nov-2018
https://doi.org/10.1109/TCAD.2018.2857059
Mittal S(2017)A Survey of Soft-Error Mitigation Techniques for Non-Volatile MemoriesComputers10.3390/computers60100086:1(8)Online publication date: 13-Feb-2017
https://doi.org/10.3390/computers6010008
Tavana MZiabari AArjomand MKandemir MDas CKaeli DJacob B(2017)REMAPProceedings of the International Symposium on Memory Systems10.1145/3132402.3132421(385-398)Online publication date: 2-Oct-2017
https://dl.acm.org/doi/10.1145/3132402.3132421
Bhattacharya TChakraborty SSuri M(2017)Advanced performance improvement algorithms for emerging resistive memory: CBRAM case study2017 IEEE 6th Non-Volatile Memory Systems and Applications Symposium (NVMSA)10.1109/NVMSA.2017.8064473(1-4)Online publication date: Aug-2017
https://doi.org/10.1109/NVMSA.2017.8064473
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