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RDE-based transistor-level gate simulation for statistical static timing analysis

Published: 13 June 2010 Publication History

Abstract

Existing industry-practice statistical static timing analysis (SSTA) engines use black-box gate-level models for standard cells, which have accuracy problems as well as require massive amounts of CPU time in Monte-Carlo (MC) simulation. In this paper we present a new transistor-level non-Monte Carlo statistical analysis method based on solving random differential equations (RDE) computed from modified nodal analysis (MNA). In order to maintain both high accuracy and efficiency, we introduce a simplified statistical transistor model for 45nm technology and below. The model is combined with our new simulation-like engine which can do both implicit non-MC statistical simulation and deterministic simulation fast and accurately. The statistics of delay and slew are calculated by means of the proposed analysis method. Experiments show the proposed method is both run time efficient and very accurate.

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cover image ACM Conferences
DAC '10: Proceedings of the 47th Design Automation Conference
June 2010
1036 pages
ISBN:9781450300025
DOI:10.1145/1837274
Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Published: 13 June 2010

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  1. non-Monte Carlo
  2. statistical static timing analysis
  3. transistor-level modeling

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