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Analysis and modeling of subthreshold leakage of RT-components under PTV and state variation

Published: 04 October 2006 Publication History

Abstract

In this work we present a SPICE-based RTL subthreshold-leakage model analyzing components built in 70nm technology [1]. We present a separation approach regarding inter- and intra-die threshold variations, temperature, supply-voltage, and state dependence. The body-effect and differences between NMOS and PMOS introduce a leakage state dependence of one order of magnitude[2, 3]. We show that the leakage of RT-components still shows state dependencies between 20% and $80%. A leakage model not regarding the state can never be more accurate than this. The proposed state aware model has an average error of 6.7% for the RT-components analyzed.

References

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Berkeley Predictive Technology Model: www-device.eecs.berkeley.edu/~ptm/
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D Helms, M Hoyer, W Nebel: Accurate PTV, State, and ABB Aware RTL Blackbox Modeling of Subthreshold, Gate, and PN-Junction Leakage. PATMOS, 2006.
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  • (2013)The COMPLEX reference framework for HW/SW co-design and power management supporting platform-based design-space explorationMicroprocessors & Microsystems10.1016/j.micpro.2013.09.00137:8(966-980)Online publication date: 1-Nov-2013
  • (2011)Rapid Prototyping of Complex HW/SW Systems using a Timing and Power Aware ESL FrameworkSystem Specification and Design Languages10.1007/978-1-4614-1427-8_10(157-173)Online publication date: 8-Nov-2011
  • (2007)Power-optimal RTL arithmetic unit soft-macro selection strategy for leakage-sensitive technologiesProceedings of the 2007 international symposium on Low power electronics and design10.1145/1283780.1283815(159-164)Online publication date: 27-Aug-2007
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  1. Analysis and modeling of subthreshold leakage of RT-components under PTV and state variation

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    cover image ACM Conferences
    ISLPED '06: Proceedings of the 2006 international symposium on Low power electronics and design
    October 2006
    446 pages
    ISBN:1595934626
    DOI:10.1145/1165573
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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    Published: 04 October 2006

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    Author Tags

    1. leakage
    2. modeling
    3. process variation
    4. state dependence

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    ISLPED06: International Symposium on Low Power Electronics and Design
    October 4 - 6, 2006
    Bavaria, Tegernsee, Germany

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    Overall Acceptance Rate 398 of 1,159 submissions, 34%

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    View all
    • (2013)The COMPLEX reference framework for HW/SW co-design and power management supporting platform-based design-space explorationMicroprocessors & Microsystems10.1016/j.micpro.2013.09.00137:8(966-980)Online publication date: 1-Nov-2013
    • (2011)Rapid Prototyping of Complex HW/SW Systems using a Timing and Power Aware ESL FrameworkSystem Specification and Design Languages10.1007/978-1-4614-1427-8_10(157-173)Online publication date: 8-Nov-2011
    • (2007)Power-optimal RTL arithmetic unit soft-macro selection strategy for leakage-sensitive technologiesProceedings of the 2007 international symposium on Low power electronics and design10.1145/1283780.1283815(159-164)Online publication date: 27-Aug-2007
    • (2007)Modeling and estimation of full-chip leakage current considering within-die correlationProceedings of the 44th annual Design Automation Conference10.1145/1278480.1278504(93-98)Online publication date: 4-Jun-2007
    • (2006)Accurate PTV, state, and ABB aware RTL blackbox modeling of subthreshold, gate, and PN-Junction leakageProceedings of the 16th international conference on Integrated Circuit and System Design: power and Timing Modeling, Optimization and Simulation10.1007/11847083_6(56-65)Online publication date: 13-Sep-2006

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