Electrical isolation of typeII  InAs/InGaSb superlattices from GaSb substrates

W. C. Mitchel; S. Elhamri; H. J. Haugan; R. Berney; Shin Mou; G. J. Brown

doi:10.1117/12.2080847

8 February 2015 Electrical isolation of typeII InAs/InGaSb superlattices from GaSb substrates

W. C. Mitchel, S. Elhamri, H. J. Haugan, R. Berney, Shin Mou, G. J. Brown

Proceedings Volume 9370, Quantum Sensing and Nanophotonic Devices XII; 937038 (2015) https://doi.org/10.1117/12.2080847
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

We show here that n-type InAs/InGaSb superlattices can be electrically isolated from lightly doped n-type GaSb substrates at much higher temperatures than from the more common undoped p-type GaSb substrates without the use of a large band gap insulating buffer layer. Temperature dependent Hall effect measurements show superlattice conduction up to near room temperature, which is significantly higher than the 20 K observed for p-type substrates. Multi-carrier analysis of magnetic field dependent transport data demonstrate the absence of a substrate related conduction channel. We argue that the isolation is due to the depletion layer at the p-n junction between the p-type buffer layer and the n-type substrate.

Citation Download Citation

W. C. Mitchel, S. Elhamri, H. J. Haugan, R. Berney, Shin Mou, and G. J. Brown "Electrical isolation of typeII InAs/InGaSb superlattices from GaSb substrates", Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 937038 (8 February 2015); https://doi.org/10.1117/12.2080847

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