"Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both ..."

H. Fukutome et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830184

access: closed

type: Conference or Workshop Paper

metadata version: 2022-08-04

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H. Fukutome, K. Suh, W. Kim, Y. Moriyama, S. Kang, B. Eom, J. Kim, C. Yoon, W. Kwon, Y. Chung, Y. Nam, Y. Kim, S. Park, J. Park, H.-J. Cho, K. Rim, S. D. Kwon:
Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint. VLSI Technology and Circuits 2022: 369-370

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