"Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: ..."

Alberto Marcuzzi et al. (2024)

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DOI: 10.1109/IRPS48228.2024.10529310

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type: Conference or Workshop Paper

metadata version: 2024-10-06

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Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. IRPS 2024: 1-5

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