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ORCIDXavier Aymerich
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2010 – 2019
- 2019
[j28]Marcos Maestro-Izquierdo
, Javier Martín-Martínez, Albert Crespo-Yepes, Manel Escudero, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Antonio Rubio:
Experimental Verification of Memristor-Based Material Implication NAND Operation. IEEE Trans. Emerg. Top. Comput. 7(4): 545-552 (2019)- 2018
- [c3]Marta Pedro, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization. DCIS 2018: 1-4 - 2015
- [c2]V. Velayudhan, Javier Martín-Martínez, Marc Porti, Carlos Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Carlos Marquez, Francisco Gámiz:
Threshold voltage and on-current Variability related to interface traps spatial distribution. ESSDERC 2015: 230-233 - 2013
- [j27]Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt:
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. Microelectron. Reliab. 53(6): 867-871 (2013) - [j26]V. Velayudhan, Francisco Gámiz, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs. Microelectron. Reliab. 53(9-11): 1243-1246 (2013) - [j25]Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications. Microelectron. Reliab. 53(9-11): 1247-1251 (2013) - 2012
- [j24]Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. González, Montserrat Nafría, Xavier Aymerich, Eddy Simoen:
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. Microelectron. Reliab. 52(9-10): 1924-1927 (2012) - [j23]Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen:
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures. Microelectron. Reliab. 52(9-10): 2110-2114 (2012) - [c1]Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Unified characterization of RTN and BTI for circuit performance and variability simulation. ESSDERC 2012: 266-269 - 2010
- [j22]Javier Martín-Martínez, Esteve Amat, M. B. González, P. Verheyen, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Eddy Simoen:
SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors. Microelectron. Reliab. 50(9-11): 1263-1266 (2010) - [j21]Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, E. Whittaker, B. Hamilton:
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. Microelectron. Reliab. 50(9-11): 1312-1315 (2010)
2000 – 2009
- 2009
- [j20]Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses. Microelectron. Reliab. 49(9-11): 1024-1028 (2009) - [j19]Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani:
Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectron. Reliab. 49(9-11): 1188-1191 (2009) - 2008
- [j18]W. Polspoel, Wilfried Vandervorst, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. Microelectron. Reliab. 48(8-9): 1521-1524 (2008) - 2007
- [j17]Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis:
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions. Microelectron. Reliab. 47(4-5): 544-547 (2007) - [j16]Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Effect of oxide breakdown on RS latches. Microelectron. Reliab. 47(4-5): 581-584 (2007) - [j15]Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis:
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. Microelectron. Reliab. 47(4-5): 665-668 (2007) - [j14]Javier Martín-Martínez, Simone Gerardin, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Andrea Cester, Alessandro Paccagnella, G. Ghidini:
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs. Microelectron. Reliab. 47(9-11): 1349-1352 (2007) - 2006
- [j13]Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Ben Kaczer, Guido Groeseneken:
FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectron. Reliab. 46(9-11): 1608-1611 (2006) - 2005
- [j12]X. Blasco, Montserrat Nafría, Xavier Aymerich, J. Pétry, Wilfried Vandervorst:
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM. Microelectron. Reliab. 45(5-6): 811-814 (2005) - [j11]Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. Microelectron. Reliab. 45(5-6): 861-864 (2005) - [j10]Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. Microelectron. Reliab. 45(9-11): 1390-1393 (2005) - 2004
- [j9]Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
A new approach to the modeling of oxide breakdown on CMOS circuits. Microelectron. Reliab. 44(9-11): 1519-1522 (2004) - [j8]Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. Microelectron. Reliab. 44(9-11): 1523-1528 (2004) - 2003
- [j7]Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. Microelectron. Reliab. 43(8): 1203-1209 (2003) - [j6]Marc Porti, Montserrat Nafría, Xavier Aymerich:
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectron. Reliab. 43(9-11): 1501-1505 (2003) - [j5]Gabriel Abadal, Francesc Pérez-Murano, Núria Barniol, Xavier Aymerich:
The measurement of the tip current noise as a method to characterize the exposed area of coated ESTM tips. IEEE Trans. Instrum. Meas. 52(3): 859-864 (2003) - 2002
- [j4]X. Blasco, Montserrat Nafría, Xavier Aymerich:
Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures. Microelectron. Reliab. 42(9-11): 1513-1516 (2002) - 2001
- [j3]Rosana Rodríguez, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films. Microelectron. Reliab. 41(7): 1011-1013 (2001) - [j2]Marc Porti, X. Blasco, Montserrat Nafría, Xavier Aymerich, Alexander Olbrich, Bernd Ebersberger:
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope. Microelectron. Reliab. 41(7): 1041-1044 (2001) - [j1]Daniel Hill, X. Blasco, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Characterising the surface roughness of AFM grown SiO2 on Si. Microelectron. Reliab. 41(7): 1077-1079 (2001)
Coauthor Index
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