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ORCIDKuniyuki Kakushima
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2010 – 2019
- 2019
[c6]Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Kazuo Itou, Toshihiro Takakura, Munetoshi Fukui, Shinichi Suzuki, Ken Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa:
Switching of 3300V Scaled IGBT by 5V Gate Drive. ASICON 2019: 1-3- 2018
- [j31]Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima:
Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing. Microelectron. Reliab. 84: 226-229 (2018) - [j30]Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima:
Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors. Microelectron. Reliab. 84: 248-252 (2018) - [c5]Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigvo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Lwai:
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately. ESSDERC 2018: 26-29 - [c4]Kuniyuki Kakushima, Takuya Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, Takuya Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, Ken Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Y. Numasawa, Atsushi Ogura
, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai:
New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment. VLSI Circuits 2018: 105-106 - 2017
- [j29]Akito Sasaki, Hideyuki Oozu, Miho Nakamura, Katsuaki Aoki, Yoshinori Kataoka, Syuichi Saito, Kumpei Kobayashi, Wei Li, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai:
Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries. Microelectron. Reliab. 68: 86-90 (2017) - [c3]Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, Masaharu Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, Hiromichi Ohashi, Hiroshi Iwai:
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). ASICON 2017: 1137-1140 - 2016
- [j28]J. Chen, Takamasa Kawanago, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, D. Nohata, Hiroshi Nohira, Kuniyuki Kakushima:
La2O3 gate dielectrics for AlGaN/GaN HEMT. Microelectron. Reliab. 60: 16-19 (2016) - [j27]M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima:
Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes. Microelectron. Reliab. 63: 42-45 (2016) - [j26]J. Chen, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima:
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current. Microelectron. Reliab. 63: 52-55 (2016) - 2015
- [j25]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. Microelectron. Reliab. 55(2): 402-406 (2015) - [j24]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. Microelectron. Reliab. 55(2): 407-410 (2015) - 2014
- [j23]Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectron. Reliab. 54(4): 725-729 (2014) - [j22]Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken:
Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures. Microelectron. Reliab. 54(4): 746-754 (2014) - [j21]Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai:
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. Microelectron. Reliab. 54(5): 899-904 (2014) - [j20]Xuan Feng, Hei Wong, B. L. Yang, Shurong Dong, Hiroshi Iwai, Kuniyuki Kakushima:
On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric. Microelectron. Reliab. 54(6-7): 1133-1136 (2014) - 2013
- [c2]Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. ESSDERC 2013: 107-110 - 2012
- [j19]Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. Microelectron. Reliab. 52(4): 688-691 (2012) - [j18]M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors. Microelectron. Reliab. 52(6): 1039-1042 (2012) - [j17]B. L. Yang, Hei Wong, Kuniyuki Kakushima, Hiroshi Iwai:
Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric. Microelectron. Reliab. 52(8): 1613-1616 (2012) - [j16]Enrique Miranda, Takamasa Kawanago, Kuniyuki Kakushima, Jordi Suñé, Hiroshi Iwai:
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown. Microelectron. Reliab. 52(9-10): 1909-1912 (2012) - [c1]Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. ESSDERC 2012: 89-92 - 2011
- [j15]Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet:
Si nanowire FET and its modeling. Sci. China Inf. Sci. 54(5): 1004-1011 (2011) - [j14]D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai:
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. Microelectron. Reliab. 51(4): 746-750 (2011) - [j13]Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai:
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. Microelectron. Reliab. 51(5): 879-884 (2011) - [j12]Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst:
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs. Microelectron. Reliab. 51(5): 885-888 (2011) - 2010
- [j11]Hiroshi Shimomura, Kuniyuki Kakushima, Hiroshi Iwai:
Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs. IEICE Trans. Electron. 93-C(5): 678-684 (2010) - [j10]Hiroshi Shimomura, Kuniyuki Kakushima, Hiroshi Iwai:
Equivalent Noise Temperature Representation for Scaled MOSFETs. IEICE Trans. Electron. 93-C(10): 1550-1552 (2010) - [j9]Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui, Hiroshi Iwai:
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. Microelectron. Reliab. 50(3): 332-337 (2010) - [j8]Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
SrO capping effect for La2O3/Ce-silicate gate dielectrics. Microelectron. Reliab. 50(3): 356-359 (2010) - [j7]Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. Microelectron. Reliab. 50(6): 790-793 (2010)
2000 – 2009
- 2009
- [j6]Sik-Lam Siu, Hei Wong, Wing-Shan Tam, Kuniyuki Kakushima, Hiroshi Iwai:
Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors. Microelectron. Reliab. 49(4): 387-391 (2009) - 2008
- [j5]Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. Microelectron. Reliab. 48(11-12): 1769-1771 (2008) - 2007
- [j4]Joel Molina Reyes, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress. IEICE Electron. Express 4(6): 185-191 (2007) - [j3]Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai:
Parasitic Effects in Multi-Gate MOSFETs. IEICE Trans. Electron. 90-C(10): 2051-2056 (2007) - 2006
- [j2]Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai:
Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing. IEICE Electron. Express 3(13): 316-321 (2006) - 2005
- [j1]Kuniyuki Kakushima, Tarik Bourouina, T. Sarnet, G. Kerrien, D. Débarre, J. Boulmer, Hiroyuki Fujita:
Silicon periodic nano-structures obtained by laser exposure of nano-wires. Microelectron. J. 36(7): 629-633 (2005)
Coauthor Index
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