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ORCID45th ESSDERC 2015: Graz, Austria
- 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. IEEE 2015, ISBN 978-1-4673-7133-9
- Jonas Hansryd
:
5G wireless communication beyond 2020. 1-3 - Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. 4-9 - Barbara Stadlober, Esther Karner, Andreas Petritz, Alexander Fian, Mihai Irimia-Vladu:
Nature as microelectronic fab: Bioelectronics: Materials, transistors and circuits. 10-17 - Sandro Carrara:
New frontiers in digital health: Remote monitoring of animal and human metabolism on our smartphones and tablets. 18 - Shinichi Takagi, Mitsuru Takenaka:
Ge/III-V MOS device technologies for low power integrated systems. 20-25 - Toby Hallam, Hye-Young Kim, Maria O'Brien, Riley Gatensby, Niall McEvoy, Georg S. Duesberg:
Investigations of vapor phase deposited transition metal dichalcogenide films for future electronic applications. 26-30 - Thomas Ernst, Sebastien Hentz, Julien Arcamone, Vincent Agache, Laurent Duraffourg, Issam Ouerghi, Willy Ludurczak, Carine Ladner, Eric Ollier, Philippe Andreucci, Éric Colinet, Pierre Puget:
High performance NEMS devices for sensing applications. 31-35 - Mark S. Lundstrom:
Computational electronics for the 21st century: Reflections on the past, present, and future. 36-39 - Arnab Biswas, Luca De Michielis, Antonios Bazigos, Adrian Mihai Ionescu:
Compact modeling of DG-Tunnel FET for Verilog-A implementation. 40-43 - Juli Blasco, Jordi Suñé, Enrique Miranda:
Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects. 44-47 - Jian Zhang, Pierre-Emmanuel Gaillardon, Giovanni De Micheli:
A surface potential and current model for polarity-controllable silicon nanowire FETs. 48-51 - Tapas Kumar Maiti, Lei Chen, Hidenori Miyamoto, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Mixed-domain compact modeling framework for fluid flow driven by electrostatic organic actuators. 52-55 - S. A. Jauss, S. Schwaiger, W. Daves, S. Noll, O. Ambacher:
Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress. 56-59 - Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl:
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. 60-63 - Peter Moens, Abhishek Banerjee, P. Coppens, Aurore Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack:
Technology and design of GaN power devices. 64-67 - Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán:
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. 68-71 - Roberta Stradiotto, Gregor Pobegen, Clemens Ostermaier, Tibor Grasser:
On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements. 72-75 - Thomas Skotnicki, Stéphane Monfray:
UTBB FDSOI: Evolution and opportunities. 76-79 - Yves Laplanche:
Implementation of ARM® Cores in FinFET technolgies. 80-83 - Jean-Pierre Raskin:
FinFET versus UTBB SOI - A RF perspective. 84-88 - Gergo P. Szakmany, Alexei O. Orlov, Gary H. Bernstein, Wolfgang Porod:
Antenna-coupled single-metal thermocouple array for energy harvesting. 89-92 - Abhishek A. Sharma, Marek Skowronski, James A. Bain, Jeffrey A. Weldon:
Novel CMOS-compatible a-Si based oscillator and threshold switch. 93-96 - Grazvydas Ziemys, Andrew Giebfried, Markus Becherer, Irina Eichwald, Doris Schmitt-Landsiedel, Stephan Breitkreutz-v. Gamm:
Modelling and simulation of nanomagnetic logic with cadence virtuoso using Verilog-A. 97-100 - György Csaba, Adam Papp, Wolfgang Porod, Ramazan Yeniceri:
Non-boolean computing based on linear waves and oscillators. 101-104 - Mitsuo Fukuda, Hiroki Sakai, T. Mano, Yu Kimura, Masashi Ota, Masashi Fukuhara, Takuma Aihara, Yuya Ishii, Takeshi Ishiyama:
Plasmonic and electronic device integrated circuits and their characteristics. 105-108 - An Chen:
Emerging nonvolatile memory (NVM) technologies. 109-113 - Attilio Belmonte, Andrea Fantini, Augusto Redolfi, M. Houssa, Malgorzata Jurczak, Ludovic Goux:
Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM. 114-117 - Johannes Ocker, Stefan Slesazeck, Thomas Mikolajick, S. Buschbeck, S. Günther, E. Yurchuk, R. Hoffmann, V. Beyer:
On the voltage scaling potential of SONOS non-volatile memory transistors. 118-121 - Young Ho Lee, Min Yong Lee, Seung Beom Baek, Jong Chul Lee, Su Jin Chae, Hae Chan Park, Byoung Ki Lee, Hyeong Soo Kim:
High performance low A/R poly PN diode for 20nm node PCRAM cell switch. 122-125 - Turar Baltynov, Vineet Unni, E. M. Sankara Narayanan:
The world's first high voltage GaN-on-diamond power devices. 126-129 - Dong-Hyeok Son, Young-woo Jo, Ryun-Hwi Kim, Chan Heo, Jae Hwa Seo, Jin Su Kim, In Man Kang, Sorin Cristoloveanu, Jung-Hee Lee:
Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. 130-133 - Antoine Litty, Sylvie Ortolland, Dominique Golanski, Christian Dutto, Sorin Cristoloveanu:
EDMOS in ultrathin FDSOI: Effect of doping and layout of the drift region. 134-137 - Abbas Khanmohammadi, Reinhard Enne, Michael Hofbauer, Horst Zimmermann:
Monolithically integrated optical random pulse generator in high voltage CMOS technology. 138-141 - Christoph Steffan, Philipp Greiner, Bernd Deutschmann, Carolin Kollegger, Gerald Holweg:
Energy harvesting with on-chip solar cells and integrated DC/DC converter. 142-145 - Marc Sansa, Guillaume Gourlat, Guillaume Jourdan, Patrick Villard, Gilles Sicard, Sebastien Hentz:
Compact heterodyne NEMS oscillator for sensing applications. 146-148 - Issam Ouerghi, Willy Ludurczak, Laurent Duraffourg, Carine Ladner, Anouar Idrissi-El Oudrhiri, Patrice Gergaud, Maud Vinet, Thomas Ernst:
Piezoresistive transduction optimization of p-doped poly-Silicon NEMS. 149-152 - A. Ziaei, S. Bansropun, P. Martins, M. Le Baillif:
Fast high power capacitive RF-MEMS switch for X-Band applications. 153-155 - Alice Pelamatti, Vincent Goiffon, Aziouz Chabane, Pierre Magnan, Cédric Virmontois, Olivier Saint-Pé, Michel Breart de Boisanger:
Charge transfer speed analysis in pinned photodiode CMOS image sensors based on a pulsed storage-gate method. 156-159 - Bruce B. Doris, Terence Hook:
Scalability of planar FDSOI and FinFETs and What's in store for the future beyond that? 160-163 - Edith Beigné, Jean-Frédéric Christmann, Alexandre Valentian, Olivier Billoint, Esteve Amat, Dominique Morche:
UTBB FDSOI technology flexibility for ultra low power internet-of-things applications. 164-167 - Li Tao, Weinan Zhu, Joon-Seok Kim, Deji Akinwande:
(Invited) silicene and phosphorene: Progress on the intriguing case of buckled atomic sheets. 168-171 - Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max Christian Lemme, Tibor Grasser:
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. 172-175 - C. Mukherjee, Jorgue Daniel Aguirre Morales, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, Wei Wei:
Characterization and modeling of low-frequency noise in CVD-grown graphene FETs. 176-179 - Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer:
A new physics-based compact model for Bilayer Graphene Field-Effect Transistors. 180-183 - Amit Gahoi, Vikram Passi, Satender Kataria, Stefan Wagner, Andreas Bablich, Max Christian Lemme:
Systematic comparison of metal contacts on CVD graphene. 184-187 - Matthias Streiff:
Sensors and the Internet of Things. 188 - Werner Brockherde, Benjamin Bechen, Ernst Bodenstorfer, Jörg Brodersen, Konrad J. Mayer, Christian Nitta, Olaf Schrey:
A multi-functional 200, 000 lines/s tri-linear RGB line-scan sensor. 189 - Drago Strle, Janez Trontelj:
Unified system level model of adsorption/desorption process and sensing electronics for vapor trace detection of different molecules in the air. 190-193 - Lukas Zoscher, Jasmin Grosinger, Raphael Spreitzer, Ulrich Muehlmann, Hannes Groß, Wolfgang Bösch:
Concept for a security aware automatic fare collection system using HF/UHF dual band RFID transponders. 194-197 - Sam Vaziri, Melkamu Belete, Anderson D. Smith, Eugenio Dentoni Litta, Grzegorz Lupina, Max Christian Lemme, Mikael Östling:
Step tunneling-enhanced hot-electron injection in vertical graphene base transistors. 198-201 - Guilhem Larrieu, Y. Guerfi, X. L. Han, N. Clement:
Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire array. 202-205 - A. Shaw, T. J. Whittles, Ivona Z. Mitrovic, J. D. Jin, J. S. Wrench, D. Hesp, V. R. Dhanak, Paul R. Chalker, Steve Hall:
Physical and electrical characterization of Mg-doped ZnO thin-film transistors. 206-209 - J. Pelloux-Prayer, Mikaël Cassé, François Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold:
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. 210-213 - Shraddha Kothari, Chandan Joishi, Dhirendra Vaidya, Hasan Nejad, Benjamin Colombeau, Swaroop Ganguly, Saurabh Lodha:
Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications. 214-217 - Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser:
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. 218-225 - Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marko Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov:
Experimental evidences and simulations of trap generation along a percolation path. 226-229 - V. Velayudhan, Javier Martín-Martínez, Marc Porti, Carlos Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Carlos Marquez, Francisco Gámiz:
Threshold voltage and on-current Variability related to interface traps spatial distribution. 230-233 - Andreas Mai, Alexander Fox:
Reliability aspects of TiSi-Schottky barrier diodes in a SiGe BiCMOS technology. 234-237 - Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marko Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov:
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. 238-241 - Gaspard Hiblot, Quentin Rafhay, Loic Gaben, Gérard Ghibaudo, Frédéric Boeuf:
Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR. 242-245 - Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond:
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. 246-249 - Hassan El Dirani, Yohann Solaro, Pascal Fonteneau, Philippe Ferrari, Sorin Cristoloveanu:
Sharp-switching Z2-FET device in 14 nm FDSOI technology. 250-253 - Ning Li, Takeshi Inoue, Takuichi Hirano, Jian Pang, Rui Wu, Kenichi Okada, Hitoshi Sakane, Akira Matsuzawa:
Substrate noise isolation improvement by helium-3 ion irradiation technique in a triple-well CMOS process. 254-257 - Chika Tanaka, Keiji Ikeda, Masumi Saitoh:
New layout design methodology for monolithically integrated 3D CMOS logic circuits based on parasitics engineering. 258-261 - C. Y. Chen, Ludovic Goux, Andrea Fantini, Robin Degraeve, Augusto Redolfi, Guido Groeseneken, Malgorzata Jurczak:
Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current. 262-265 - M. Azzaz, A. Benoist, Elisa Vianello, Daniele Garbin, Eric Jalaguier, Carlo Cagli, C. Charpin, Stefania Bernasconi, Simon Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, Philippe Candelier, Claire Fenouillet-Béranger, Luca Perniola:
Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization. 266-269 - Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan:
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory. 270-273 - Panagiotis Bousoulas, Dionisis Sakellaropoulos, J. Giannopoulos, Dimitris Tsoukalas:
Improving the resistive switching uniformity of forming-free TiO2-x based devices by embedded Pt nanocrystals. 274-277 - Mukta Singh Parihar, Fanyu Liu, Carlos Navarro, Sylvain Barraud, Maryline Bawedin, Irina Ionica, Abhinav Kranti, Sorin Cristoloveanu:
Back-gate effects and detailed characterization of junctionless transistor. 282-285 - Luca Pirro, Irina Ionica, Sorin Cristoloveanu, Gérard Ghibaudo:
Low-frequency noise in bare SOI wafers: Experiments and model. 286-289 - Andrei Schmidt, Stefan Dreiner, Holger Vogt, Uwe Paschen:
Thin-film SOI PIN-diode leakage current dependence on back-gate-potential and HCI traps. 290-293 - Gabriella Ghidini, Daniele Merlini, Massimiliano Cannavo, Maria Luisa Polignano, Isabella Mica, Amos Galbiati, Lucia Zullino, Riccardo Turconi, Salvatore Grasso, Maurizio Moroni, Davide Codegoni:
H2 annealing for metallic contaminant reduction in BCD-SOI process: Benefits and drawbacks. 294-297 - Anibal Pacheco-Sanchez, Sven Mothes, Martin Claus, Michael Schröter:
Contact resistance extraction methods for CNTFETs. 298-301 - Hamilton Carrillo-Nunez, Mathieu Luisier, Andreas Schenk:
Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical tunneling paths. 302-305 - O. Badami, Enrico Caruso, Daniel Lizzit, David Esseni, Pierpaolo Palestri, Luca Selmi:
Improved surface roughness modeling and mobility projections in thin film MOSFETs. 306-309 - Zlatan Stanojevic, Markus Karner, Martin Aichhorn, Ferdinand Mitterbauer, Volker Eyert, Christian Kernstock, Hans Kosina:
Predictive physical simulation of III/V quantum-well MISFETs for logic applications. 310-313 - Manouchehr Hosseini, Mohammad Elahi, Ebrahim Asl Soleimani, Mahdi Pourfath, David Esseni:
Strain engineering of single-layer MoS2. 314-317 - Luca Lucci, Jean-Charles Barb, Marco Pala:
Electric performance of AlGaN/GaN heterojunction devices: A full-quantum study. 318-321
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