"Improving the electrical characteristics of MOS transistors with ..."

B. L. Yang et al. (2012)

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DOI: 10.1016/J.MICROREL.2011.10.009

access: closed

type: Journal Article

metadata version: 2020-02-22

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B. L. Yang, Hei Wong, Kuniyuki Kakushima, Hiroshi Iwai:
Improving the electrical characteristics of MOS transistors with CeO₂/La₂O₃ stacked gate dielectric. Microelectron. Reliab. 52(8): 1613-1616 (2012)

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