"13.3 20nm High-density single-port and dual-port SRAMs with ..."

Makoto Yabuuchi et al. (2014)

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DOI: 10.1109/ISSCC.2014.6757414

access: closed

type: Conference or Workshop Paper

metadata version: 2020-08-10

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Makoto Yabuuchi, Yasumasa Tsukamoto, Masao Morimoto, Miki Tanaka, Koji Nii:
13.3 20nm High-density single-port and dual-port SRAMs with wordline-voltage-adjustment system for read/write assists. ISSCC 2014: 234-235

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