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"Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with ..."
Zhan Gao et al. (2022)
- Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz:
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS 2022: 51-1
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