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ORCIDTaiichi Otsuji
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2020 – today
- 2024
[c13]Chao Tang, Koichi Tamura, Aoi Hamada, Hiroyoshi Kudo, Shinnosuke Uchigasaki, Yuma Takida, Hiroaki Minamide, Tsung-Tse Lin, Akira Satou, Taiichi Otsuji:
Bi2Se3/h-BN Heterostructure Rectenna for fast and Sensitive THz Detection. DRC 2024: 1-2- 2023
- [c12]Dai Nakajima, Kazuki Nishimura, Mitsuki Watanabe, Tsung-Tse Lin, Keisuke Kasai, Masato Yoshida, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou:
Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal. OFC 2023: 1-3 - 2021
- [j16]Michael S. Shur
, Gregory Aizin, Taiichi Otsuji, Victor Ryzhii:
Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications. Sensors 21(23): 7907 (2021) - [c11]Koichi Tamura, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Akira Satou, Yuma Takida, Hiroaki Minamide, Taiichi Otsuji:
Fast terahertz detection by asymmetric dual-grating-gate graphene FET. DRC 2021: 1-2 - [c10]Taiichi Otsuji, Katsumi Iwatsuki, Hirohito Yamada, Masafumi Yashima:
Concept of Resilient Electric Power and Information Communication Technology (R-EICT) Converged Network Systems Based on Overall Optimization of Autonomous Decentralized Cooperative Control of DC Microgrids. ISGT 2021: 1-5
2010 – 2019
- 2019
- [c9]Yuya Omori, Tomotaka Hosotani, Taiichi Otsuji, Katsumi Iwatsuki, Akira Satou:
UTC-PD-Integrated HEMT for Optical-to-Millimeter-Wave Carrier Frequency Down-Conversion. OFC 2019: 1-3 - 2018
- [c8]Stephane Boubanga-Tombet, Deepika Yadav, Wojciech Knap, Vyacheslav V. Popov, Taiichi Otsuji:
Graphene-Channel-Transistor Terahertz Amplifier. DRC 2018: 1-2 - 2015
- [c7]Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Mastura B. Hussin, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Junichi Kani, Jun Terada, Taiichi Otsuji:
Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network. ECOC 2015: 1-3 - 2013
- [j15]Hirokazu Fukidome, Yusuke Kawai, Hiroyuki Handa, Hiroki Hibino, Hidetoshi Miyashita, Masato Kotsugi, Takuo Ohkochi, Myung-Ho Jung, Tetsuya Suemitsu, Toyohiko Kinoshita, Taiichi Otsuji, Maki Suemitsu:
Site-Selective Epitaxy of Graphene on Si Wafers. Proc. IEEE 101(7): 1557-1566 (2013) - [j14]Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu:
High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique. Proc. IEEE 101(7): 1603-1608 (2013) - [c6]Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu:
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs. ESSDERC 2013: 115-118 - [c5]Tetsuya Kawasaki, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama, Takayuki Watanabe, Susumu Takabayashi, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Taiichi Otsuji, Youichi Fukada, Junichi Kani, Jun Terada, Naoto Yoshimoto:
Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band. ESSDERC 2013: 318-321 - 2010
- [j13]Amine el Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji:
Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems. IEICE Trans. Electron. 93-C(8): 1286-1289 (2010)
2000 – 2009
- 2009
- [j12]Takuya Nishimura, Nobuhiro Magome, HyunChul Kang, Taiichi Otsuji:
Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter. IEICE Trans. Electron. 92-C(5): 696-701 (2009) - 2007
- [j11]Mitsuhiro Hanabe, Yahya Moubarak Meziani, Taiichi Otsuji, Eiichi Sano, Tanemasa Asano:
Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer. IEICE Trans. Electron. 90-C(5): 949-954 (2007) - 2006
- [j10]Mitsuhiro Hanabe, Takuya Nishimura, Masaki Miyamoto, Taiichi Otsuji, Eiichi Sano:
Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer. IEICE Trans. Electron. 89-C(7): 985-992 (2006) - [j9]Takuya Nishimura, Mitsuhiro Hanabe, Masaki Miyamoto, Taiichi Otsuji, Eiichi Sano:
Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer. IEICE Trans. Electron. 89-C(7): 1005-1011 (2006) - 2001
- [j8]Kimikazu Sano, Koichi Murata, Taiichi Otsuji, Tomoyuki Akeyoshi, Naofumi Shimizu, Eiichi Sano:
An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode. IEEE J. Solid State Circuits 36(2): 281-289 (2001) - 2000
- [j7]Koichi Murata, Taiichi Otsuji, Yuhki Imai, Suehiro Sugitani:
A distributed selector IC using GaAs MESFET's with multilayer-interconnection structure. IEEE J. Solid State Circuits 35(2): 258-267 (2000)
1990 – 1999
- 1999
- [j6]Yutaka Miyamoto, Mikio Yoneyama, Taiichi Otsuji, Kazushige Yonenaga, Naofumi Shimizu:
40-Gbit/s TDM transmission technologies based on ultra-high-speed ICs. IEEE J. Solid State Circuits 34(9): 1246-1253 (1999) - [c4]Shunji Kimura, Taiichi Otsuji, Hiroyuki Kikuchi, Koichi Murata, Eiichi Sano:
Circuit design technologies for high-speed lightwave communications beyond 40 Gbit/s. ISCAS (2) 1999: 488-491 - 1998
- [j5]Taiichi Otsuji, Koichi Murata, Takatomo Enoki, Yohtaro Umeda:
An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs. IEEE J. Solid State Circuits 33(9): 1321-1327 (1998) - [j4]Koichi Murata, Taiichi Otsuji, Mikio Yoneyama, Masami Tokumitsu:
A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's. IEEE J. Solid State Circuits 33(10): 1527-1535 (1998) - [c3]Kimikazu Sano, Koichi Narahara, Koichi Murata, Taiichi Otsuji, Kiyomitsu Onodera:
High-speed GaAs MESFET Digital IC Design for Optical Communication Systems. ASP-DAC 1998: 1-5 - 1997
- [j3]Taiichi Otsuji, Mikio Yoneyama, Koichi Murata, Eiichi Sano:
A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-μm GaAs MESFETs. IEEE J. Solid State Circuits 32(9): 1357-1362 (1997) - [j2]Taiichi Otsuji, Yuhki Imai, Eiichi Sano, Shunji Kimura, Satoshi Yamaguchi, Mikio Yoneyama, Takatomo Enoki, Yohtaro Umeda:
40-Gb/s ICs for future lightwave communications systems. IEEE J. Solid State Circuits 32(9): 1363-1370 (1997) - 1995
- [j1]Koichi Murata, Taiichi Otsuji, Eiichi Sano, Masanobu Ohhata, Minoru Togashi, Masao Suzuki:
A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-μm GaAs MESFET. IEEE J. Solid State Circuits 30(10): 1101-1108 (1995) - 1991
- [c2]Taiichi Otsuji:
A Picosecond Accuracy Timing Error Compensation Technique in TDR Measurement. ITC 1991: 969-975
1980 – 1989
- 1988
- [c1]Teruo Tamama, Naoaki Narumi, Taiichi Otsuji, Masao Suzuki, Tsuneta Sudo:
Key Technologies for 500 MHz VLSI Test System "ULTIMATE". ITC 1988: 108-113
Coauthor Index
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