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2020 – today
- 2024
[c43]Pascal Chevalier, Florian Cacho, C. Durand, N. Derrier, V. Millon, Frederic Monsieur, A. Gauthier, P. Billy, Sébastien Fregonese, Thomas Zimmer, H. Audouin, Michel Buczko, Didier Céli, C. Deglise-Favre, Cheikh Diouf, O. Foissey, M. Hello, N. Guitard, S. Madassamy, S. Ramirez-Ruiz, C. Renard, F. Sonnerat, V. Yon, D. Gloria, G. Waltisperger:
A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications. BCICTS 2024: 13-17- [c42]X. Federspiel, Cheikh Diouf, B. Arunachalam, David Roy, Florian Cacho:
Non-conducting Hot carrier temperature activation and temperature sense effect. IRPS 2024: 1-6 - [c41]Florian Cacho, P. Cathelin, Joycelyn Hai, S. Bouvot, J. Nowakowski, M. Martinez, R. Debroucke, S. Jean, R. Paulin, J. Antonijevic, X. Federspiel, Nicolas Planes, Giuseppe Papotto, Alessandro Parisi, Alessandro Finocchiaro, Andrea Cavarra, Alessandro Castorina, Claudio Nocera, Giuseppe Palmisano:
Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOS. IRPS 2024: 4 - [c40]A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier:
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. IRPS 2024: 4 - 2023
- [c39]Yunus Emre Aslan, Florian Cacho, T. Kumar, D. K. Janardan, A. Kumar, F. Giner, M. Faurichon, Lorena Anghel
:
Minimum SRAM Retention Voltage: Insight about optimizing Power Efficiency across Temperature Profile, Process Variation and Aging. IOLTS 2023: 1-6 - [c38]Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix:
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. IRPS 2023: 1-8 - [c37]Joycelyn Hai, Florian Cacho, X. Federspiel, Tidjani Garba-Seybou, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould:
Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation. IRPS 2023: 1-6 - 2022
- [j8]Lorena Anghel, Florian Cacho:
Design-Time Exploration for Process, Environment and Aging Compensation Techniques for Low Power Reliable-Aware Design. IEEE Trans. Emerg. Top. Comput. 10(2): 581-590 (2022) - [c36]Joycelyn Hai, Florian Cacho, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould, Jeremie Forest, Vincent Knopik, Xavier Garros:
Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications. IRPS 2022: 4 - [c35]Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho:
New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. IRPS 2022: 11 - [c34]M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo:
Frequency dependant gate oxide TDDB model. IRPS 2022: 25-1 - [c33]Kedar Janardan Dhori, Promod Kumar, Christophe Lecocq, Pascal Urard, Olivier Callen, Florian Cacho, Maryline Parra, Prashant Pandey, Daniel Noblet:
40nm Ultra-low Leakage SRAM with Embedded Sub-threshold Analog Closed Loop System for Efficient Source Biasing of the Memory Array in Retention Mode. VLSID 2022: 216-221 - 2021
- [c32]Florian Cacho, Lorena Anghel, Xavier Federspiel:
Monitoring Setup and Hold Timing Limits. IRPS 2021: 1-6 - [c31]Xavier Federspiel, Abdourahmane Camara, Audrey Michard, Cheikh Diouf, Florian Cacho:
HCI Temperature sense effect from 180nm to 28nm nodes. IRPS 2021: 1-5 - [c30]Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho:
Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling. IRPS 2021: 1-5 - [c29]Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent:
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS 2021: 1-5 - 2020
- [c28]Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho:
Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. IRPS 2020: 1-8 - [c27]Xavier Federspiel, Cheikh Diouf, Florian Cacho, Emmanuel Vincent:
Comparison of variability of HCI induced drift for SiON and HKMG devices. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c26]Audrey Michard, Florian Cacho, Damien Celeste, Xavier Federspiel:
Global and Local Process Variation Simulations in Design for Reliability approach. IOLTS 2019: 72-75 - [c25]Florian Cacho, X. Federspiel, D. Nouguier, Cheikh Diouf:
Investigation of NBTI Dynamic Behavior with Ultra-Fast Measurement. IRPS 2019: 1-6 - [c24]A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard:
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS 2019: 1-5 - 2018
- [c23]Ajith Sivadasan, Riddhi Jitendrakumar Shah, Vincent Huard, Florian Cacho, Lorena Anghel:
NBTI aged cell rejuvenation with back biasing and resulting critical path reordering for digital circuits in 28nm FDSOI. DATE 2018: 997-998 - [c22]Florian Cacho, D. Nouguier, M. Arabi, X. Federspiel, Y. Carminati, M. Saliva:
Integrated Test Structures for Reliability Investigation under Dynamic Stimuli. IOLTS 2018: 1-5 - [c21]Rania Lajmi, Florian Cacho, O. David, Jean-Pierre Blanc, Emmanuel Rouat, Sébastien Haendler, Ph. Benech, Estelle Lauga-Larroze, Sylvain Bourdel:
Reliability assessment of 4GSP/s interleaved SAR ADC. IRPS 2018: 5-1 - [c20]Riddhi Jitendrakumar Shah, Florian Cacho, Vincent Huard, Souhir Mhira, D. Arora, Pankaj Agarwal, Shubham Kumar, S. Balaraman, Bijoy Kumar Singh, Lorena Anghel:
Investigation of speed sensors accuracy for process and aging compensation. IRPS 2018: 5 - 2017
- [j7]Vincent Huard, Souhir Mhira, Florian Cacho, Alain Bravaix:
Enabling robust automotive electronic components in advanced CMOS nodes. Microelectron. Reliab. 76-77: 13-24 (2017) - [j6]R. Lajmi, Florian Cacho, Estelle Lauga-Larroze, Sylvain Bourdel, Ph. Benech, Vincent Huard, X. Federspiel:
Characterization of Low Drop-Out during ageing and design for yield. Microelectron. Reliab. 76-77: 92-96 (2017) - [c19]Ajith Sivadasan, Armelle Notin, Vincent Huard, Etienne Maurin, Souhir Mhira, Florian Cacho, Lorena Anghel:
Workload dependent reliability timing analysis flow. DATE 2017: 736-737 - [c18]Kedar Janardan Dhori, Hitesh Chawla, Ashish Kumar, Prashant Pandey, Promod Kumar, Lorenzo Ciampolini, Florian Cacho, Damien Croain:
High-yield design of high-density SRAM for low-voltage and low-leakage operations. DFT 2017: 1-6 - [c17]Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix:
Dynamic aging compensation and Safety measures in Automotive environment. IOLTS 2017: 106-112 - [c16]Florian Cacho, Ahmed Benhassain, Riddhi Jitendrakumar Shah, Souhir Mhira, Vincent Huard, Lorena Anghel:
Investigation of critical path selection for in-situ monitors insertion. IOLTS 2017: 247-252 - [c15]Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, David Meyer, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix:
Cognitive approach to support dynamic aging compensation. ITC 2017: 1-7 - 2016
- [j5]Cheikh Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix:
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. Microelectron. Reliab. 64: 158-162 (2016) - [j4]Alain Bravaix, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Vincent Huard:
Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. Microelectron. Reliab. 64: 163-167 (2016) - [c14]Ahmed Benhassain, Florian Cacho, Vincent Huard, Lorena Anghel:
Early failure prediction by using in-situ monitors: Implementation and application results. ERMAVSS@DATE 2016: 21-24 - [c13]Ajith Sivadasan, Florian Cacho, Sidi Ahmed Benhassain, Vincent Huard, Lorena Anghel:
Workload Impact on BTI HCI Induced Aging of Digital Circuits: A System level Analysis. ERMAVSS@DATE 2016: 38-40 - [c12]Ajith Sivadasan, Florian Cacho, Sidi Ahmed Benhassain, Vincent Huard, Lorena Anghel:
Study of workload impact on BTI HCI induced aging of digital circuits. DATE 2016: 1020-1021 - [c11]Alain Bravaix, M. Saliva, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard:
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. IOLTS 2016: 43-46 - [c10]Florian Cacho, Ahmed Benhassain, Souhir Mhira, Ajith Sivadasan, Vincent Huard, P. Cathelin, Vincent Knopik, Abhishek Jain, C. R. Parthasarathy, Lorena Anghel:
Activity profiling: Review of different solutions to develop reliable and performant design. IOLTS 2016: 47-50 - [c9]Ahmed Benhassain, Souhir Mhira, Florian Cacho, Vincent Huard, Lorena Anghel:
In-situ slack monitors: taking up the challenge of on-die monitoring of variability and reliability. IVSW 2016: 1-5 - [c8]Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud:
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. VLSI Circuits 2016: 1-2 - [c7]Lorena Anghel, Ahmed Benhassain, Ajith Sivadasan, Florian Cacho, Vincent Huard:
Early system failure prediction by using aging in situ monitors: Methodology of implementation and application results. VTS 2016: 1 - 2015
- [c6]Ahmed Benhassain, Florian Cacho, Vincent Huard, M. Saliva, Lorena Anghel, C. R. Parthasarathy, Abhishek Jain, Fabien Giner:
Timing in-situ monitors: Implementation strategy and applications results. CICC 2015: 1-4 - [c5]M. Saliva, Florian Cacho, Vincent Huard, X. Federspiel, D. Angot, Ahmed Benhassain, Alain Bravaix, Lorena Anghel:
Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. DATE 2015: 441-446 - [c4]M. Saliva, Florian Cacho, Cheikh Ndiaye, Vincent Huard, D. Angot, Alain Bravaix, Lorena Anghel:
Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology. IRPS 2015: 4 - [c3]Vincent Huard, D. Angot, Florian Cacho:
From BTI variability to product failure rate: A technology scaling perspective. IRPS 2015: 6 - [c2]P. Mora, X. Federspiel, Florian Cacho, Vincent Huard, Wafa Arfaoui:
28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation. IRPS 2015: 6 - 2012
- [j3]Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo:
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. IEEE J. Solid State Circuits 47(5): 1075-1083 (2012) - 2011
- [j2]Vincent Huard, N. Ruiz Amador, Florian Cacho, E. Pion:
A bottom-up approach for System-On-Chip reliability. Microelectron. Reliab. 51(9-11): 1425-1439 (2011) - [c1]N. Ruiz Amador, Vincent Huard, E. Pion, Florian Cacho, Damien Croain, V. Robert, Sylvain Engels, Philippe Flatresse, Lorena Anghel:
Bottom-up digital system-level reliability modeling. CICC 2011: 1-4
2000 – 2009
- 2007
- [j1]Florian Cacho, S. Orain, G. Cailletaud, H. Jaouen:
A constitutive single crystal model for the silicon mechanical behavior: Applications to the stress induced by silicided lines and STI in MOS technologies. Microelectron. Reliab. 47(2-3): 161-167 (2007)
Coauthor Index
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