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Hassan Afzali-Kusha
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2020 – today
- 2023
- [j5]Hassan Afzali-Kusha, Massoud Pedram:
X-NVDLA: Runtime Accuracy Configurable NVDLA Based on Applying Voltage Overscaling to Computing and Memory Units. IEEE Trans. Circuits Syst. I Regul. Pap. 70(5): 1989-2002 (2023) - 2022
- [c7]Hassan Afzali-Kusha, Massoud Pedram:
X-NVDLA: Runtime Accuracy Configurable NVDLA based on Employing Voltage Overscaling Approach. ISQED 2022: 7-12 - [p1]Marzieh Vaeztourshizi, Hassan Afzali-Kusha, Mehdi Kamal, Massoud Pedram:
Design Techniques for Approximate Realization of Data-Flow Graphs. Approximate Computing 2022: 175-206 - 2020
- [j4]Hassan Afzali-Kusha, Marzieh Vaeztourshizi, Mehdi Kamal, Massoud Pedram:
Design Exploration of Energy-Efficient Accuracy-Configurable Dadda Multipliers With Improved Lifetime Based on Voltage Overscaling. IEEE Trans. Very Large Scale Integr. Syst. 28(5): 1207-1220 (2020) - [c6]Hassan Afzali-Kusha, Mehdi Kamal, Massoud Pedram:
Low-power Accuracy-configurable Carry Look-ahead Adder Based on Voltage Overscaling Technique. ISQED 2020: 67-72
2010 – 2019
- 2018
- [j3]Hassan Afzali-Kusha, Omid Akbari, Mehdi Kamal, Massoud Pedram:
Energy and Reliability Improvement of Voltage-Based, Clustered, Coarse-Grain Reconfigurable Architectures by Employing Quality-Aware Mapping. IEEE J. Emerg. Sel. Topics Circuits Syst. 8(3): 480-493 (2018) - [c5]Hassan Afzali-Kusha, Omid Akbari, Mehdi Kamal, Massoud Pedram:
Energy Consumption and Lifetime Improvement of Coarse-Grained Reconfigurable Architectures Targeting Low-Power Error-Tolerant Applications. ACM Great Lakes Symposium on VLSI 2018: 431-434 - [c4]Hassan Afzali-Kusha, Alireza Shafaei, Massoud Pedram:
A 125mV 2ns-access-time 16Kb SRAM design based on a 6T hybrid TFET-FinFET cell. ISQED 2018: 280-285 - 2016
- [c3]Alireza Shafaei, Hassan Afzali-Kusha, Massoud Pedram:
Minimizing the energy-delay product of SRAM arrays using a device-circuit-architecture co-optimization framework. DAC 2016: 107:1-107:6 - [c2]Hassan Afzali-Kusha, Alireza Shafaei, Massoud Pedram:
Optimizing the Operating Voltage of Tunnel FET-Based SRAM Arrays Equipped with Read/Write Assist Circuitry. ACM Great Lakes Symposium on VLSI 2016: 415-420 - 2015
- [j2]Mohammad Ansari, Hassan Afzali-Kusha, Behzad Ebrahimi, Zainalabedin Navabi, Ali Afzali-Kusha, Massoud Pedram:
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies. Integr. 50: 91-106 (2015) - [j1]Behzad Eghbalkhah, Mehdi Kamal, Hassan Afzali-Kusha, Ali Afzali-Kusha, M. B. Ghaznavi-Ghoushchi, Massoud Pedram:
Workload and temperature dependent evaluation of BTI-induced lifetime degradation in digital circuits. Microelectron. Reliab. 55(8): 1152-1162 (2015) - [c1]Roohollah Yarmand, Behzad Ebrahimi, Hassan Afzali-Kusha, Ali Afzali-Kusha, Massoud Pedram:
High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors. ISQED 2015: 10-17
Coauthor Index
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