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ORCIDEldwin Jiaqiang Ng
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2020 – today
- 2023
[j4]Kai Tang
, Chuanshi Yang, Yanshu Guo, Nan Wang, Yao Zhu, Ying Zhang, Eldwin Jiaqiang Ng, Joshua En-Yuan Lee, Zhongyuan Fang, Wensong Wang, Hanjun Jiang, Chun-Huat Heng, Yuanjin Zheng:
A 107 pJ/b TX 260 pJ/b RX Ultralow-Power MEMS-Based Transceiver With Wake-Up in ISM-Bands for IoT Applications. IEEE J. Solid State Circuits 58(5): 1337-1349 (2023)- 2022
- [j3]Yanshu Guo, Zhongyuan Fang, Kai Tang, Zhaoyang Weng, Chuanshi Yang, Nan Wang, Eldwin Jiaqiang Ng, Zhihua Wang, Chun-Huat Heng, Hanjun Jiang, Yuanjin Zheng:
A 164- $\mu$ W 915-MHz Sub-Sampling Phase-Tracking Zero-IF Receiver With 5-Mb/s Data Rate for Short-Range Applications. IEEE J. Solid State Circuits 57(9): 2658-2671 (2022) - [c4]Yul Koh, Duan Jian Goh, Sagnik Ghosh, Han Xuan Wong, Jaibir Sharma, Amit Lal, Eldwin Jiaqiang Ng, Joshua En-Yuan Lee:
Nano-Gap Contact MEMS Torsional Mode Acceleration Switch Wake-up Sensor. IEEE SENSORS 2022: 1-4 - 2021
- [c3]Kai Tang, Chuanshi Yang, Zhongyuan Fang, Wensong Wang, Nan Wang, Yao Zhu, Eldwin Jiaqiang Ng, Chun-Huat Heng, Yuanjin Zheng:
A 75.3 pJ/b Ultra-Low Power MEMS-Based FSK Transmitter in ISM-915 MHz Band for Pico-IoT Applications. ISCAS 2021: 1-4
2010 – 2019
- 2016
- [j2]Hao-Yen Tang, Yipeng Lu, Xiaoyue Jiang, Eldwin Jiaqiang Ng, Julius M. Tsai, David A. Horsley, Bernhard E. Boser:
3-D Ultrasonic Fingerprint Sensor-on-a-Chip. IEEE J. Solid State Circuits 51(11): 2522-2533 (2016) - [c2]Ian B. Flader, Chae H. Ahn, Dustin D. Gerrard, Eldwin Jiaqiang Ng, Yushi Yang, Vu A. Hong, Marco Pavone, Thomas W. Kenny:
Autonomous calibration of MEMS disk resonating gyroscope for improved sensor performance. ACC 2016: 5803-5810 - [c1]Hao-Yen Tang, Yipeng Lu, Fari Assaderagh, Mike Daneman, Xiaoyue Jiang, Martin Lim, Xi Li, Eldwin Jiaqiang Ng, Utkarsh Singhal, Julius M. Tsai, David A. Horsley, Bernhard E. Boser:
11.2 3D ultrasonic fingerprint sensor-on-a-chip. ISSCC 2016: 202-203 - 2013
- [j1]Shirin Ghaffari, Chae H. Ahn, Eldwin Jiaqiang Ng, Shasha Wang, Thomas W. Kenny:
Crystallographic effects in modeling fundamental behavior of MEMS silicon resonators. Microelectron. J. 44(7): 586-591 (2013)
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