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ORCIDTatsuya Onuki
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2020 – today
- 2024
[c8]Hiraki Inoue, Takeya Hirose, Toshiki Mizuguchi, Yusuke Komura, Toshihiko Saito, Minato Ito, Kiyotaka Kimura, Tatsuya Onuki, Yoshinori Ando, Hiromi Sawai, Tsutomu Murakawa, Hitoshi Kunitake
, Takanori Matsuzaki, Hajime Kimura, Makoto Ikeda, Shunpei Yamazaki:
Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM. IMW 2024: 1-4- 2023
- [c7]H. Takahashi, Y. Okamoto, Toshiki Hamada, Yusuke Komura, S. Watanabe, K. Tsuda, H. Sawai, Takanori Matsuzaki, Yoshinori Ando, Tatsuya Onuki, Hitoshi Kunitake, Shunpei Yamazaki, D. Kobayashi, A. Ikuta, Takahiro Makino, Takeshi Ohshima:
Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory. IRPS 2023: 1-6 - [c6]Yusuke Komura, Shoki Miyata, Yuki Okamoto, Yuki Tamatsukuri, Hiroki Inoue, Toshihiko Saito, Munehiro Kozuma, Hidetomo Kobayashi, Tatsuya Onuki, Yuichi Yanagisawa, Toshihiko Takeuchi, Yutaka Okazaki, Hitoshi Kunitake, Daiki Nakamura, Takaaki Nagata, Yasumasa Yamane, Makoto Ikeda, Shih-Ci Yen, Chuan-Hua Chang, Wen-Hsiang Hsieh, Hiroshi Yoshida, Min-Cheng Chen, Ming-Han Liao, Shou-Zen Chang, Shunpei Yamazaki:
Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure. VLSI Technology and Circuits 2023: 1-2 - [c5]Yuki Okamoto, Yusuke Komura, Toshiki Mizuguchi, Toshihiko Saito, Minato Ito, K. Kimura, Tatsuya Onuki, Yoshinori Ando, Hiromi Sawai, Tsutomu Murakawa, Hitoshi Kunitake, Takanori Matsuzaki, Hajime Kimura, M. Fujita, Makoto Ikeda, Shunpei Yamazaki:
1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS. VLSI Technology and Circuits 2023: 1-2
2010 – 2019
- 2017
- [j2]Tatsuya Onuki, Wataru Uesugi, Atsuo Isobe, Yoshinori Ando, Satoru Okamoto, Kiyoshi Kato, Tri Rung Yew, J. Y. Wu, Chi Chang Shuai, Shao Hui Wu, James Myers, Klaus Doppler, Masahiro Fujita, Shunpei Yamazaki:
Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide FET Integrated With 65-nm Si CMOS. IEEE J. Solid State Circuits 52(4): 925-932 (2017) - 2016
- [c4]Tatsuya Onuki, Wataru Uesugi, Hikaru Tamura, Atsuo Isobe, Yoshinori Ando, Satoru Okamoto, Kiyoshi Kato, Tri Rung Yew, Chen Bin Lin, J. Y. Wu, Chi Chang Shuai, Shao Hui Wu, James Myers, Klaus Doppler, Masahiro Fujita, Shunpei Yamazaki:
Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS. VLSI Circuits 2016: 1-2 - 2015
- [c3]Takanori Matsuzaki, Tatsuya Onuki, Shuhei Nagatsuka, Hiroki Inoue, Takahiko Ishizu, Yoshinori Ieda, Naoto Yamade, Hidekazu Miyairi, Masayuki Sakakura, Tomoaki Atsumi, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Yoshitaka Yamamoto, Masahiro Fujita, Jun Koyama, Shunpei Yamazaki:
16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method. ISSCC 2015: 1-3 - 2014
- [c2]Hikaru Tamura, Kiyoshi Kato, Takahiko Ishizu, Tatsuya Onuki, Wataru Uesugi, Takuro Ohmaru, Kazuaki Ohshima, Hidetomo Kobayashi, Seiichi Yoneda, Atsuo Isobe, Naoaki Tsutsui, Suguru Hondo, Yasutaka Suzuki, Yutaka Okazaki, Tomoaki Atsumi, Yutaka Shionoiri, Yukio Maehashi, Gensuke Goto, Masahiro Fujita, James Myers, Pekka Korpinen, Jun Koyama, Yoshitaka Yamamoto, Shunpei Yamazaki:
Embedded SRAM and Cortex-M0 core with backup circuits using a 60-nm crystalline oxide semiconductor for power gating. COOL Chips 2014: 1-3 - [c1]Atsuo Isobe, Hikaru Tamura, Kiyoshi Kato, Takuro Ohmaru, Wataru Uesugi, Takahiko Ishizu, Tatsuya Onuki, Kazuaki Ohshima, Takanori Matsuzaki, Atsushi Hirose, Yasutaka Suzuki, Naoaki Tsutsui, Tomoaki Atsumi, Yutaka Shionoiri, Gensuke Goto, Jun Koyama, Masahiro Fujita, Shunpei Yamazaki:
A 32-bit CPU with zero standby power and 1.5-clock sleep/2.5-clock wake-up achieved by utilizing a 180-nm C-axis aligned crystalline In-Ga-Zn oxide transistor. VLSIC 2014: 1-2 - 2012
- [j1]Hiroki Inoue, Takanori Matsuzaki, Shuhei Nagatsuka, Yutaka Okazaki, Toshinari Sasaki, Kousei Noda, Daisuke Matsubayashi, Takahiko Ishizu, Tatsuya Onuki, Atsuo Isobe, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Jun Koyama, Shunpei Yamazaki:
Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor. IEEE J. Solid State Circuits 47(9): 2258-2265 (2012)
Coauthor Index
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