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ORCIDVLSI Design, Volume 6
Volume 6, Number 1-4, 1998
- Carl L. Gardner:
Guest Editorial. 1 - Nobuyuki Sano, Akira Yoshii:
Quantum Kinetic Transport under High Electric Fields. 3-7 - Roger K. Lake
, Gerhard Klimeck, R. Chris Bowen, Dejan Jovanovic, Paul Sotirelis, William R. Frensley:
A Generalized Tunneling Formula for Quantum Device Modeling. 9-12 - H. Ueno, S. Yamakawa, C. Hamaguchi, K. Miyatsuji:
Monte Carlo Simulation of HEMT based on Self-Consistent Method. 13-16 - Carl L. Gardner, Christian A. Ringhofer:
The Quantum Hydrodynamic Smooth Effective Potential. 17-20 - Dragica Vasileska, Terry Eldridge, Paolo Bordone, David K. Ferry:
Quantum Transport Simulation of the DOS function, Self-Consistent Fields and Mobility in MOS Inversion Layers. 21-25 - S. Yamakawa, H. Ueno, Kotaro Taniguchi, C. Hamaguchi, K. Miyatsuji, K. Masaki, Umberto Ravaioli:
Electron Mobility and Monte Carlo device simulation of MOSFETs. 27-30 - George Edwards, David K. Ferry:
Lattice Effects in the Complex Subband Dispersion of 2DEG Semiconductor Waveguide Structures Subjected to a Perpendicular Magnetic Field. 31-34 - Christoph Wasshuber, Hans Kosina:
Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge. 35-38 - Alexander N. Korotkov:
Possible Wireless Single-Electron Logic Biased by Electric Field. 39-41 - Konstantin K. Likharev, Alexander N. Korotkov:
Single-Electron Parametron. 43-46 - Henry K. Harbury, Wolfgang Porod:
Parallel Computation for Electronic Waves in Quantum Corrals. 47-51 - Wei-Kai Shih, Srinivas Jallepalli, C.-F. Yeap, Mahbub Rashed, Christine M. Maziar, A. F. Tasch Jr.:
A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers. 53-56 - Leonardo R. C. Fonseca, Alexander N. Korotkov, Konstantin K. Likharev:
SENECA: a New Program for the Analysis of Single-Electron Devices. 57-60 - Harold L. Grubin, T. R. Govindan:
Quantum Contributions and Violations of the Classical Law of Mass Action. 61-64 - Rimon Ikeno, Hiroshi Ito, Kunihiro Asada:
One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects. 65-67 - B. A. Sanborn:
Total Dielectric Function Approach to the Electron Boltzmann Equation for Scattering from a Two-Dimensional Coupled Mode System. 69-72 - R. Khoie:
A Study of Transconductance Degradation in HEMT Using a Self-consistent Boltzmann-Poisson-Schrödinger Solver. 73-77 - Joseph W. Parks Jr., Kevin F. Brennan, Larry E. Tarof:
Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes. 79-82 - Jian Ping Sun, George I. Haddad:
Self-Consistent Scattering Calculation of Resonant Tunneling Diode Characteristics. 83-86 - A. P. Jauho, M. B. Bønsager, Karsten Flensberg, B. Y.-K. Hu, J. Kinaret:
Microscopic Theory of Transconductivity. 87-90 - Asen Asenov, Andrew R. Brown, Scott Roy, John R. Barker:
Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices. 91-95 - C. David Levermore:
Moment Closure Hierarchies for the Boltzmann-Poisson Equation. 97-101 - Hiroshi Mizuta:
Three-Dimensional S-Matrix Simulation of Single-Electron Resonant Tunnelling Through Random Ionised Donor States. 103-106 - Gerhard Klimeck, Roger K. Lake, Chris R. Bowen, Chenjing L. Fernando, William R. Frensley:
Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO). 107-110 - Ming Y. Kao, Donald J. Rose, Hai Shao:
Gridding and Discretization For Divergence Form (Semiconductor-Like) PDEs. 111-115 - Daniel C. Kerr, Isaak D. Mayergoyz:
A New Method to Recover Vectorial Electric Fields and Current Densities from Unstructured Meshes. 117-121 - Mei-Kei Ieong, Ting-Wei Tang:
Distributed Algorithms for Three-dimensional Semiconductor Device Simulations. 123-126 - S. Babiker, Asen Asenov, John R. Barker, S. P. Beaumont:
Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs. 127-130 - Zhi-An Shao, Wolfgang Porod, Craig S. Lent:
2D Finite Element Method Simulation of Lateral Resonant Tunneling Devices. 131-135 - Sauro Succi, P. Vergari:
A Lattice Boltzmann Scheme for Semiconductor Dynamics. 137-140 - Zhiping Yu, Robert W. Dutton:
Second Order Newton Iteration Method and Its Application to MOS Compact Modeling and Circuit Simulation. 141-145 - Umberto Ravaioli, Amanda Duncan, A. Pacelli, Carl J. Wordelman, Karl Hess:
Hierarchy of Full Band Structure Models for Monte Carlo Simulation. 147-153 - Marcello A. Anile, Orazio Muscato, Salvatore Rinaudo, P. Vergari:
Testing Hydrodynamical Models on the Characteristics of a One-Dimensional Submicrometer Structure. 155-160 - Rossella Brunetti, Maria Cristina Vecchi, Massimo Rudan:
Monte Carlo Analysis of Anisotropy in the Transport Relaxation Times for the Hydrodynamic Model. 161-165 - Gabriele F. Formicone, Dragica Vasileska, David K. Ferry:
2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si. 167-171 - Deyin Xu, Ting-Wei Tang, Sergei S. Kucherenko:
Time-Dependent Solution of a Full Hydrodynamic Model Including Convective Terms and Viscous Effect. 173-176 - Arlynn W. Smith, Kevin F. Brennan:
Comparison of Non-Parabolic Hydrodynamic Models Based On Different Band Structure Models. 177-180 - J. Cai, H. L. Cui, E. H. Lenzing, R. Pastore, D. L. Rhodes, B. S. Perlman:
Hydrodynamic Device Modeling with Band Nonparabolicity. 181-183 - Alfredo J. Piazza, Can E. Korman:
Computation of the Spectral Density of Current Fluctuations in Bulk Silicon Based on the Solution of the Boltzmann Transport Equation. 185-189 - Wenchao Liang, Daniel C. Kerr, Neil Goldsman, Isaak D. Mayergoyz:
Hydrodynamic Device Simulation with New State Variables Specially Chosen for a Block Gummel Iterative Approach. 191-195 - N. A. Bannov, V. V. Mitin, F. T. Vasko:
Modelling of Hot Acoustic Phonon Propagation in Two Dimensional Layers. 197-200 - V. V. Mitin, N. A. Bannov, R. Mickevicius, Gedas Paulavicius:
Numerical Simulation of Heat Removal from Low Dimensional Nanostructures. 201-204 - Hans Kosina, M. Harrer:
A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure. 205-208 - G. Kaiblinger-Grujin, Hans Kosina:
An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations. 209-212 - Mahbub Rashed, Wei-Kai Shih, Srinivas Jallepalli, R. Zaman, Thomas J. T. Kwan, Christine M. Maziar:
A Monte Carlo study , of Electron Transport in Strained Si/SiGe Heterostructures. 213-216 - Ming-C. Cheng:
A New Concept for Solving the Boltzmann Transport Equation in Ultra-fast Transient Situations. 217-222 - Giorgio Baccarani, Massimo Rudan, M. Lorenzini, C. Sala:
Recent Advances in Device Simulation Using Standard Transport Models. 223-237 - Maria Cristina Vecchi, Jan Mohring, Massimo Rudan:
An Efficient Solution Scheme for the Spherical-Harmonics Expansion of the Boltzmann Transport Equation Applied to Two-Dimensional Devices. 239-242 - Clinton R. Arokianathan, Asen Asenov, John H. Davies:
A New Approach based on Brownian Motion for the Simulation of Ultra-Small Semiconductor Devices. 243-246 - Orazio Muscato, Rosa M. Pidatella, Massimo V. Fischetti:
Monte Carlo and hydrodynamic simulation of a one dimensional n+ - n - n+ silicon diode. 247-250 - Wenchao Liang, Neil Goldsman, Isaak D. Mayergoyz:
A New Self-Consistent 2D Device Simulator Based on Deterministic Solution of the Boltzmann, Poisson and Hole-Continuity Equations. 251-256 - Surinder P. Singh, Neil Goldsman, Isaak D. Mayergoyz:
Self-Consistent Solution of the Multi Band Boltzmann, Poisson and Hole-Continuity Equations. 257-260 - Daniel C. Kerr, Neil Goldsman, Isaak D. Mayergoyz:
Three-Dimensional Hydrodynamic Modeling of MOSFET Devices. 261-265 - Daniel C. Kerr, Isaak D. Mayergoyz:
3-D Device Simulation Using Intelligent Solution Method Control. 267-272 - Subramaniam Pennathur, Can K. Sandalci, Çetin Kaya Koç, Stephen M. Goodnick:
3D Parallel Monte Carlo Simulation of GaAs MESFETs. 273-276 - Gui-Qiang G. Chen, Joseph W. Jerome, Chi-Wang Shu:
Analysis and Simulation of Extended Hydrodynamic Models: The Multi-Valley Gunn Oscillator and MESFET Symmetries. 277-282 - Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, Massimo Rudan:
Transient Analysis of Silicon Devices Using the Hydrodynamic Model. 283-286 - Juan Bautista Roldán, F. Gámiz, J. A. López-Villanueva, J. E. Carceller:
Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization. 287-290 - Duilio Meglio, Corrado Cianci, Aldo Di Carlo, Paolo Lugli:
Non Local Impact Ionization Effects in Semiconductor Devices. 291-297 - Edwin C. Kan, Gyoyoung Jin, Zhiping Yu, Robert W. Dutton:
Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization. 299-302 - P. Douglas Yoder, Ulrich Krumbein, Klaus Gärtner, Nobuo Sasaki, Wolfgang Fichtner:
Statistical Enhancement of Terminal Current Estimation for Monte Carlo Device Simulation. 303-306 - Jürgen Jakumeit, Umberto Ravaioli, Karl Hess:
New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator. 307-311 - Anton Arnold:
Numerically Absorbing Boundary Conditions for Quantum Evolution Equations. 313-319 - Eckehard Schöll:
Modeling Nonlinear and Chaotic Dynamics in Semiconductor Device Structures. 321-329 - David K. Ferry, George Edwards:
Studies of Chaotic Transport of Electrons in Quantum Boxes. 331-334 - Minhan Chen, Wolfgang Porod:
Simulation of Quantum-Dot Structures in Si/SiO2. 335-339 - Konstantin K. Likharev, Alexander N. Korotkov:
Analysis of Q0-Independent Single-Electron Systems. 341-344 - M. Macucci, Karl Hess:
Corrections to the Capacitance between Two Electrodes Due to the Presence of Quantum Confined System. 345-349 - Leonard F. Register:
Simulation of Optical Excitation to and Emission from Electron Fabry-Perot States Subject to Strong Inelastic Scattering. 351-353 - Matt Grupen, Karl Hess:
The Coupled Optoelectronic Problems of Quantum Well Laser Operation. 355-362 - David Z.-Y. Ting, Thomas C. McGill:
Modeling Light-Extraction Characteristics of Packaged Light-Emitting Diodes. 363-366 - F. Oyafuso, Paul von Allmen, Matt Grupen, Karl Hess:
Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model. 367-371 - Andrew P. Kuprat, Denise George, Eldon Linnebur, Harold Trease, R. Kent Smith:
Moving Adaptive Unstructured 3-D Meshes in Semiconductor Process Modeling Applications. 373-378 - Ganesh Rajagopalan, Vadali Mahadev, Timothy S. Cale:
Surface Evolution During Semiconductor Processing. 379-384 - Robert W. Dutton, Edwin C. Kan:
Hierarchical Process Simulation for Nano-Electronics. 385-391 - Masami Kumagai, Kiyoyuki Yokoyama, Satoshi Tazawa:
A Compound Semiconductor Process Simulator and its Application to Mask Dependent Undercut Etching. 393-397 - Matthias K. Gobbert, Timothy S. Cale, Christian A. Ringhofer:
The Combination of Equipment Scale and Feature Scale Models for Chemical Vapor Deposition Via a Homogenization Technique. 399-403 - Vamsee K. Pamula, R. Venkat:
Beating in the RHEED Intensity Oscillations during Surfactant Mediated GaAs Molecular Beam Epitaxy: Process Physics and Modeling. 405-408 - M. Meyyappan, T. R. Govindan:
Plasma Process Modeling for Integrated Circuits Manufacturing. 409-412
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