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ORCIDESSDERC 2014: Venice Lido, Italy
- 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. IEEE 2014, ISBN 978-1-4799-4378-4
- Greg Atwood, Scott DeBoer, Kirk Prall, Linda Somerville:
A semiconductor memory development and manufacturing perspective. 1-6 - Sehat Sutardja:
Slowing of Moore's law signals the beginning of smart everything. 7-8 - Walter Snoeys
:
How chips helped discover the Higgs boson at CERN. 9-19 - Fabio Marchio, Boris Vittorelli, Roberto Colombo:
Automotive electronics: Application & technology megatrends. 23-29 - Thomas H. Lee:
Terahertz electronics: The last frontier. 30-34 - Eric Pop, Chris English, Feng Xiong, Feifei Lian, Andrey Serov, Zuanyi Li, Sharnali Islam, Vincent E. Dorgan:
Energy efficiency and conversion in 1D and 2D electronics. 35-37 - Takao Someya:
Bionic skins using flexible organic devices. 38-41 - Halid Mulaosmanovic, Christian Monzio Compagnoni, Niccolo Castellani, Gianpietro Carnevale, Domenico Ventrice, Paolo Fantini, Alessandro S. Spinelli, Andrea L. Lacaita, Augusto Benvenuti:
Data regeneration and disturb immunity of T-RAM cells. 46-49 - Sangyong Park, Seongwook Choi, Kwang Sun Jun, HuiJung Kim, SungMan Rhee, Young June Park:
Investigation on multiple activation energy of retention in charge trapping memory using self-consistent simulation. 50-53 - Giovanni M. Paolucci, Massimo Ernesto Bertuccio, Christian Monzio Compagnoni, Silvia Beltrami, Alessandro S. Spinelli, Andrea L. Lacaita, Angelo Visconti:
Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern. 54-57 - Kyunghwan Lee, Duckseoung Kang, Hyungcheol Shin, Sangjin Kwon, Shinhyung Kim, Yuchul Hwang:
Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory. 58-61 - Giacomo Langfelder, Cesare Buffa, Paolo Minotti, Antonio Longoni, Alessandro Tocchio, Sarah Zerbini:
Operation of Lorentz-force MEMS magnetometers with on-off current switching. 62-65 - Christopher Lawrence Ayala, Daniel Grogg, Antonios Bazigos, Montserrat Fernandez-Bolaños Badia, Urs Dürig, Michel Despont, Christoph Hagleitner:
A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon. 66-69 - Marco Barbato, Andrea Cester, Viviana Mulloni, Benno Margesin, Giorgio De Pasquale, Aurelio Somà, Gaudenzio Meneghesso:
Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperatures. 70-73 - Safina Hussain, Richard C. Jaeger, Jeffrey C. Suhling:
Current dependence of the piezoresistive coefficients of CMOS FETs on (100) silicon. 74-77 - Giorgio C. Mutinati, Elise Brunet, Olena Yurchenko, Elmar Laubender, Gerald A. Urban, Anton Köck, Stephan Steinhauer, Joerg Siegert, Karl Rohracher, Franz Schrank, Martin Schrems:
Bimetallic nanoparticles for optimizing CMOS integrated SnO2 gas sensor devices. 78-81 - Alberto Tosi, Mirko Sanzaro, Niccolo Calandri, Alessandro Ruggeri, Fabio Acerbi:
Low dark count rate and low timing jitter InGaAs/InP Single-Photon Avalanche Diode. 82-85 - Saleem Khan, Ravinder S. Dahiya, Leandro Lorenzelli:
Flexible thermoelectric generator based on transfer printed Si microwires. 86-89 - A. Erika Pondigo de los, Edmundo A. Gutiérrez-D., Joel Molina Reyes, Fernando Guarin:
Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs. 90-93 - Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo:
Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI. 94-97 - Brian Zimmer, Olivier Thomas, Seng Oon Toh, Taylor Vincent, Krste Asanovic, Borivoje Nikolic:
Joint impact of random variations and RTN on dynamic writeability in 28nm bulk and FDSOI SRAM. 98-101 - Trong Huynh Bao, Dmitry Yakimets, Julien Ryckaert, Ivan Ciofi, Rogier Baert, Anabela Veloso, Jürgen Bömmels, Nadine Collaert, Philippe Roussel, S. Demuynck, Praveen Raghavan, Abdelkarim Mercha, Zsolt Tokei, Diederik Verkest, Aaron Thean, Piet Wambacq:
Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies. 102-105 - François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, Vincent Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, Michel Haond:
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. 106-109 - Claire Fenouillet-Béranger, Bernard Previtali, Perrine Batude, Fabrice Nemouchi, Mikaël Cassé, Xavier Garros, Lucie Tosti, Nils Rambal, Dominique Lafond, Hugo Dansas, Luca Pasini, Laurent Brunet, Fabien Deprat, Magali Grégoire, M. Mellier, Maud Vinet:
FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration. 110-113 - Anh-Tuan Pham, Seonghoon Jin, Woosung Choi, M. J. Lee, S. H. Cho, Y.-T. Kim, K.-H. Lee, Y. Park:
InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 Band k · p theory. 114-117 - Hamilton Carrillo-Nunez, Mathieu Luisier, Andreas Schenk:
Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk. 118-119 - Pengying Chang, Lang Zeng, Xiaoyan Liu, Gang Du:
Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain. 122-125 - Enrico Piccinini, Massimo Rudan, Fabrizio Buscemi, Rossella Brunetti:
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides. 126-129 - Ales Chvála, Daniel Donoval, Lukás Nagy, Juraj Marek, Patrik Pribytny, Marian Molnar:
3-D electrothermal device/circuit simulation of DC-DC converter module in multi-die IC. 130-133 - Antoine Litty, Sylvie Ortolland, Dominique Golanski, Sorin Cristoloveanu:
Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications. 134-137 - Shiqian Shao, Wei-Cheng Lien, Ayden Maralani, Albert P. Pisano:
Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment. 138-141 - Remis Gaska, Mikhail Gaevski, Jianyu Deng, Rakesh Jain, Grigory Simin, Michael S. Shur:
Novel AlInN/GaN integrated circuits operating up to 500 °C. 142-145 - Farid Medjdoub, Etienne Okada, Bertrand Grimbert, Damien Ducatteau, Riccardo Silvestri, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso:
High performance high reliability AlN/GaN DHFET. 146-149 - Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt:
A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs. 150-153 - James R. Moyne, Martin Schellenberger, Lothar Pfitzner:
The Factory Integration Roadmap in Semiconductor manufacturing. 154-156 - Markus Brummayer, Stefan Fuchshumer:
Mission Smart Production1. 157-159 - Martin Schrems, Joerg Siegert, Peter Dorfi, Jochen Kraft, Ewald Stueckler, Franz Schrank, Siegfried Selberherr:
Manufacturing of 3D integrated sensors and circuits. 162-165 - Yang Shang, Hao Yu, Chang Yang, Sanming Hu, Minkyu Je:
A high-sensitivity 135GHz millimeter-wave imager by differential transmission-line loaded split-ring-resonator in 65nm CMOS. 166-169 - Lucio Pancheri, Filippo Savazzi, Gian-Franco Dalla Betta, David Stoppa, Maurizio Boscardin:
IR-optimized silicon demodulating detector with 3-dimensional electrodes. 170-173 - Zahra Kolahdouz Esfahani, Teng Ma, Henk W. van Zeijl, G. Q. Zhang, Ali Rostamian, Mohammadreza Kolahdouz:
Blue selective photodiodes for optical feedback in LED wafer level packages. 174-177 - Christian Schulte-Braucks, Simon Richter, Lars Knoll, Luca Selmi, Qing-Tai Zhao, Siegfried Mantl:
Experimental demonstration of improved analog device performance in GAA-NW-TFETs. 178-181 - Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota:
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. 182-185 - Cem Alper, Pierpaolo Palestri, Livio Lattanzio, Jose L. Padilla, Adrian M. Ionescu:
Two dimensional quantum mechanical simulation of low dimensional tunneling devices. 186-189 - Nilay Dagtekin, Adrian M. Ionescu:
Investigation of partially gated Si tunnel FETs for low power integrated optical sensing. 190-193 - Luigi G. Occhipinti:
Innovative manufacturing of large-area electronics. 194-197 - Jukka Hast, Sami Ihme, Jukka-Tapani Mäkinen, Kimmo Keränen, Markus Tuomikoski, Kari Ronka, Harri Kopola:
Freeform and flexible electronics manufacturing using R2R printing and hybrid integration techniques. 198-201 - Isabelle Chartier, Stéphanie Jacob, Michaël Charbonneau, Abdelkader Aliane, Aurelia Plihon, Romain Coppard, Romain Gwoziecki, Jean-Marie Verilhac, Christophe Serbutoviez, Olivier Dhez, Eugenio Cantatore, Fabrice Domingues Dos Santos:
Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applications. 202-205 - Jeroen van den Brand, Margreet de Kok, Ashok Sridhar, Maarten Cauwe, Rik Verplancke, Frederick Bossuyt, Johan de Baets, Jan Vanfleteren:
Flexible and stretchable electronics for wearable healthcare. 206-209 - Christine Harendt, Zili Yu, Joachim N. Burghartz, Jan Kostelnik, Andreas Kugler, Stefan Saller:
Hybrid Systems in foil (HySiF) exploiting ultra-thin flexible chips. 210-213 - Eleftherios G. Ioannidis, Sébastien Haendler, Christoforos G. Theodorou, Nicolas Planes, Charalabos A. Dimitriadis, Gérard Ghibaudo:
Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. 214-217 - Hiromitsu Awano, Masayuki Hiromoto, Takashi Sato:
Variability in device degradations: Statistical observation of NBTI for 3996 transistors. 218-221 - Sergej Makovejev, Babak Kazemi Esfeh, Jean-Pierre Raskin, Valeria Kilchytska, Denis Flandre, Vincent Barral, Nicolas Planes, Michel Haond:
Variability of UTBB MOSFET analog figures of merit in wide frequency range. 222-225 - Guillaume Besnard, Xavier Garros, François Andrieu, Phuong Nguyen, William van den Daele, Patrick Reynaud, Walter Schwarzenbach, Daniel Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu:
Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. 226-229 - Andrea Cattaneo, Sandro Pinarello, Jan-Erik Mueller, Robert Weigel:
MOSFET degradation under DC and RF Fowler-Nordheim stress. 230-233 - Maurizio Rizzi, Nicola Ciocchini, Daniele Ielmini, Andrea Ghetti, Paolo Fantini:
Set/reset statistics and kinetics in phase change memory arrays. 234-237 - Andrea Redaelli, Luca Laurin, Simone Lavizzari, Carmela Cupeta, Giorgio Servalli, Augusto Benvenuti:
High Ion/Ioff ratio BJT selector for 32 cell string Resistive RAM arrays. 238-241 - Stefano Ambrogio, Simone Balatti, Daniele Ielmini, David C. Gilmer:
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays. 242-245 - Francesco Maria Puglisi, Paolo Pavan, Luca Larcher, Andrea Padovani:
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS. 246-249 - Peng Huang, Bing Chen, Haitong Li, Zhe Chen, Bin Gao, Xiaoyan Liu, Jinfeng Kang:
Parameters extraction on HfOX based RRAM. 250-253 - Frederic Monsieur, Yvan Denis, Denis Rideau, Vincent Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord:
The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. 254-257 - Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez:
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs. 258-261 - Federica Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. 262-265 - Arjun Ajaykumar, Xing Zhou, Binit Syamal, Siau Ben Chiah:
Compact Fermi potential model for heterostructure HEMTs with rectangular quantum well. 266-269 - Filippo Alagi, Mattia Rossetti, Roberto Stella, Emanuele Viganò, Philippe Raynaud:
Compact model for parametric instability under arbitrary stress waveform. 270-273 - Giulia Piccolo, Piet I. Kuindersma, Lars-Åke Ragnarsson, Raymond J. E. Hueting, Nadine Collaert, Jurriaan Schmitz:
Silicon LEDs in FinFET technology. 274-277 - Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota:
Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. 278-281 - Sebastiano Strangio, Pierpaolo Palestri, David Esseni, Luca Selmi, Felice Crupi:
Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires. 282-285 - Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo:
Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime. 286-289 - Luca Parmesan, Neale A. W. Dutton, Neil J. Calder, Andrew J. Holmes, Lindsay A. Grant, Robert K. Henderson:
A 9.8 μm sample and hold time to amplitude converter CMOS SPAD pixel. 290-293 - Federica A. Villa, Danilo Bronzi, Michele Vergani, Yu Zou, Alessandro Ruggeri, Franco Zappa, Alberto Dalla Mora:
Analog SiPM in planar CMOS technology. 294-297 - Nicola Wrachien, Andrea Cester, Nicolò Lago, Gaudenzio Meneghesso, Riccardo D'Alpaos, Andrea Stefani, Guido Turatti, Michele Muccini:
Effects of constant voltage stress on organic complementary logic inverters. 298-301 - Ajay Bhoolokam, Manoj Nag, Adrian Vaisman Chasin, Soeren Steudel, Jan Genoe, Gerwin H. Gelinck, Guido Groeseneken, Paul Heremans:
Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors. 302-304 - C. Mukherjee, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, David Mele:
Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation. 305-308 - Sam Vaziri, Anderson D. Smith, Grzegorz Lupina, Max Christian Lemme, Mikael Östling:
PDMS-supported graphene transfer using intermediary polymer layers. 309-312 - Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. 313-316 - Enrique G. Marin, Francisco Javier García Ruiz, Andres Godoy, Isabel M. Tienda-Luna, Francisco Gámiz:
Size-dependent electron mobility in InAs nanowires. 317-320 - Alessandro Ferrara, Peter G. Steeneken, Boni K. Boksteen, Anco Heringa, Andries J. Scholten, Jurriaan Schmitz, Raymond J. E. Hueting:
Identifying failure mechanisms in LDMOS transistors by analytical stability analysis. 321-324 - Ilaria Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison:
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. 325-328 - Giorgia Longobardi, Florin Udrea, Stephen Sque, Jeroen Croon, Fred Hurkx, Jan Sonsky:
The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations. 329-332 - Federico Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Dhanoop Varghese, Rick Wise:
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. 333-336 - Gilberto Curatola, Andreas Kassmanhuber, Sergey Yuferev, Jörg Franke, Gianmauro Pozzovivo, Simone Lavanga, Gerhard Prechtl, Thomas Detzel, Oliver Haeberlen:
GaN virtual prototyping: From traps modeling to system-level cascode optimization. 337-340 - E. M. Bazizi, Alban Zaka, Tom Herrmann, Francis Benistant, J. H. M. Tin, J. P. Goh, L. Jiang, M. Joshi, H. van Meer, K. Korablev:
Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation. 341-344 - R. Valín, Antonio Martinez, Manuel Aldegunde, John R. Barker:
Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulations. 345-348 - Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov:
Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability. 349-352 - Vihar P. Georgiev, Salvatore M. Amoroso, Laia Vila-Nadal, Cristoph Busche, Leroy Cronin, Asen Asenov:
FDSOI molecular flash cell with reduced variability for low power flash applications. 353-356 - Mauro Ciappa, Emre Ilgünsatiroglu, Alexey Yu. Illarionov, F. Filosomi, C. Santini:
Monte Carlo modeling of the extraction of roughness parameters at nanometer scale by Critical Dimension Scanning Electron Microscopy. 357-360 - Maryam Olyaei, B. Gunnar Malm, Eugenio Dentoni Litta, Per-Erik Hellström, Mikael Östling:
Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer. 361-364 - Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer:
Impact of Off State Stress on advanced high-K metal gate NMOSFETs. 365-368 - Olof Engström, Henryk M. Przewlocki, Ivona Z. Mitrovic, Stephen Hall:
Internal photoemission technique for high-k oxide/semiconductor band offset determination: The influence of semiconductor bulk properties. 369-372 - Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria:
Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors. 373-376 - Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso:
Breakdown investigation in GaN-based MIS-HEMT devices. 377-380 - Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage:
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. 381-384 - Javier Leon, Xavier Perpiñà, Miquel Vellvehí, Xavier Jordà, Philippe Godignon:
Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing. 385-388 - Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni:
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. 389-392 - Dejana Cucak, Miroslav Vasic, Óscar García, Yves Bouvier, Jesús Ángel Oliver, Pedro Alou, José A. Cobos, Ashu Wang, Sara Martin-Horcajo, Fatima Romero, Fernando Calle:
Physical model for GaN HEMT design optimization in high frequency switching applications. 393-396 - Muhammad Alshahed, Zili Yu, Horst Rempp, Harald Richter, Christine Harendt, Joachim N. Burghartz:
Thermal characterization and modeling of ultra-thin silicon chips. 397-400 - Roland Sorge, Jürgen Quick, Peter Schley, Detlef K. Bolze, Thomas Grabolla:
Low frequency MOS-CV technique for selfconsistent determination of dark currents in high resistivity substrates. 401-404 - Carlos Navarro, Maryline Bawedin, François Andrieu, Jacques Cluzel, Xavier Garros, Sorin Cristoloveanu:
CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes. 405-408 - Gilberto Antonio Umana-Membreno, Sung-Jae Chang, Maryline Bawedin, Jaroslav Antoszewski, Sorin Cristoloveanu, Lorenzo Faraone:
Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs. 409-412 - Hal Edwards, Niu Jin, Fan-Chi Hou, Li Jen Choi, Tracey Krakowski, Kuntal Joardar:
Temperature dependence of threshold voltage fluctuations in CMOS transistors incorporating halo implant. 413-416
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