"On MX2-based metal-oxide-semiconductor device capacitance-voltage ..."

Dennis Lin et al. (2021)

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DOI: 10.1109/DRC52342.2021.9467203

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type: Conference or Workshop Paper

metadata version: 2022-10-02

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Dennis Lin, Xiangyu Wu, Vivek Mootheri, Daire Cott, Benjamin Groven, Pierre Morin, Inge Asselberghs, Iuliana P. Radu:
On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. DRC 2021: 1-2

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