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2020 – today
- 2020
[c11]Songtao Liu, Yeyu Tong, Justin Norman, Mario Dumont, Arthur Gossard, Hon Ki Tsang, John E. Bowers:
High Efficiency, High Gain and High Saturation Output Power Quantum Dot SOAs Grown on Si and Applications. OFC 2020: 1-3
2010 – 2019
- 2019
- [c10]Jian Huang, Yating Wan, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen:
Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate. DRC 2019: 165-166 - [c9]Songtao Liu, Daehwan Jung, Justin C. Norman, M. J. Kennedy, Arthur C. Gossard, John E. Bowers:
A Low-Noise High-Channel-Count 20 GHz Passively Mode Locked Quantum Dot Laser Grown on Si. OFC 2019: 1-3 - [c8]Xinru Wu, Songtao Liu, Daehwan Jung, Justin C. Norman, M. J. Kennedy, Hon Ki Tsang, Arthur C. Gossard, John E. Bowers:
Terabit Interconnects with a 20-GHz O-Band Passively Mode Locked Quantum Dot Laser Grown Directly on Silicon. OFC 2019: 1-3 - [c7]Songtao Liu, Xinru Wu, Minh A. Tran, Duanni Huang, Justin Norman, Daehwan Jung, Arthur Gossard, John E. Bowers:
High performance lasers on Si. OECC/PSC 2019: 1-3 - 2018
- [c6]Songtao Liu
, Justin C. Norman, Daehwan Jung, M. J. Kennedy, Arthur C. Gossard, John E. Bowers:
9 GHz passively mode locked quantum dot lasers directly grown on Si. DRC 2018: 1-2 - [c5]Daisuke Inoue, Daehwan Jung, Justin Norman, Yating Wan, Nobuhiko Nishiyama, Shigehisa Arai, Arthur C. Gossard, John E. Bowers:
NRZ and PAM-4 Direct Modulation of 1.3µm Quantum Dot Lasers Grown Directly on On-Axis (001) Si. ECOC 2018: 1-3 - [c4]Daehwan Jung, Justin Norman, M. J. Kennedy, Robert Herrick, Chen Shang, Catherine Jan, Arthur C. Gossard, John E. Bowers:
Low Threshold Current 1.3 μm Fabry-Perot III-V Quantum Dot Lasers on (001) Si with Superior Reliability. OFC 2018: 1-3 - 2017
- [c3]Yating Wan, Qiang Li, Alan Y. Liu, Yu Geng, Justin Norman, Weng W. Chow, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, Kei May Lau:
Quantum dot lasers grown on (001) Si substrate for integration with amorphous Si waveguides. OFC 2017: 1-3 - 2014
- [c2]John E. Bowers, J. T. Bovington, Alan Y. Liu, Arthur C. Gossard:
A path to 300 mm hybrid silicon photonic integrated circuits. OFC 2014: 1-3 - [c1]Alan Y. Liu, Chong Zhang, Andrew Snyder, Dimitri Lubychev, Joel M. Fastenau, Amy W. K. Liu, Arthur C. Gossard, John E. Bowers:
High performance 1.3µm InAs quantum dot lasers epitaxially grown on silicon. OFC 2014: 1-3
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